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Collective magnetization dynamics in ferromagnetic (Ga,Mn)As mediated by photo-excited carriers

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 Added by Xinhui Zhang
 Publication date 2015
  fields Physics
and research's language is English




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We present a study of photo-excited magnetization dynamics in ferromagnetic (Ga,Mn)As films observed by time-resolved magneto-optical measurements. The magnetization precession triggered by linearly polarized optical pulses in the absence of an external field shows a strong dependence on photon frequency when the photo-excitation energy approaches the band-edge of (Ga,Mn)As. This can be understood in terms of magnetic anisotropy modulation by both laser heating of the sample and by hole-induced non-thermal paths. Our findings provide a means for identifying the transition of laser-triggered magnetization dynamics from thermal to non-thermal mechanisms, a result that is of importance for ultrafast optical spin manipulation in ferromagnetic materials via non-thermal paths.



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Photo-excited precession of magnetization in (Ga,Mn)As is investigated by measuring time-resolved magneto-optical response and transient differential reflectivity with pump-and-probe technique. In the time region less than 1 ps, rapidly oscillating and spike-like signals are observed, respectively, with excitation of below and above the GaAs band gap. Analysis with gyromagnetic model and autocorrelation function concludes that those signals are not attributed to ultrafast demagnetization but due to interference between pump and probe pulses incorporating sub-ps carrier dynamics characteristic of low-temperature grown semiconductors. Photo-ionization of Mn ions (Mn2+ -> Mn3+) is proposed as a mechanism which dynamically induces orbital angular momentum and affects hole-mediated magnetic anisotropy in (Ga,Mn)As.
We show that the magnetization of a thin ferromagnetic (Ga,Mn)As layer can be modulated by picosecond acoustic pulses. In this approach a picosecond strain pulse injected into the structure induces a tilt of the magnetization vector M, followed by the precession of M around its equilibrium orientation. This effect can be understood in terms of changes in magneto-crystalline anisotropy induced by the pulse. A model where only one anisotropy constant is affected by the strain pulse provides a good description of the observed time-dependent response.
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Current induced magnetization switching and resistance associated with domain walls pinned in nanoconstrictions have both been previously reported in (Ga,Mn)As based devices, but using very dissimilar experimental schemes and device geometries . Here we report on the simultaneous observation of both effects in a single nanodevice, which constitutes a significant step forward towards the eventual realization of spintronic devices which make use of domain walls to store, transport, and manipulate information.
We report single-color, time resolved magneto-optical measurements in ferromagnetic semiconductor (Ga,Mn)As. We demonstrate coherent optical control of the magnetization precession by applying two successive ultrashort laser pulses. The magnetic field and temperature dependent experiments reveal the collective Mn-moment nature of the oscillatory part of the time-dependent Kerr rotation, as well as contributions to the magneto-optical signal that are not connected with the magnetization dynamics.
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Aiming at studying the mechanism of photo-excited precession of magnetization in ferromagnetic (Ga,Mn)As, magneto-optical (MO) and differential reflectivity (DR) temporal profiles are studied at relatively long and ultra-short time scales for samples with different Mn contents (x=0.01-0.11). As to the oscillatory MO profiles observed in the long time scale, simulation based on the LLG equation combined with two different MO effects confirms photo-inducement of the perpendicular anisotropy component p-Heff. As for the profiles observed in the ultra-short time scale, they are consistently explained in terms of the dynamics of photo-generated carriers, but not by the sudden reduction in magnetization. With those experimental results and analyses, new mechanism which accounts for the photo-induced p-Heff is addressed; photo-ionization like excitation of Mn(II). Namely, Mn(II) is excited into Mn(III) and e . It is discussed that such excitation tips magnetic anisotropy toward the out-of-plane direction through the inducement of orbital angular momentum and the gradient dMn(II*)/dz. Validity of the proposed mechanism is examined by estimating the efficiency of excitation on the basis of the Lambert-Beer law and the experimental p-Heff values, through which the efficiency of 1-10 ppm with the nominal optical cross section of around 5 x 10^12 m^2 are obtained.
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