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Register a new userArsenene: Two-dimensional buckled and puckered honeycomb arsenic systems
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Recently phosphorene, monolayer honeycomb structure of black phosphorus, was experimentally manufactured and attracts rapidly growing interests. Here we investigate stability and electronic properties of honeycomb structure of arsenic system based on first principle calculations. Two types of honeycomb structures, buckled and puckered, are found to be stable. We call them arsenene as in the case of phosphorene. We find that both the buckled and puckered arsenene possess indirect gaps. We show that the band gap of the puckered and buckled arsenene can be tuned by applying strain. The gap closing occurs at 6% strain for puckered arsenene, where the bond angles between the nearest neighbour become nearly equal. An indirect-to-direct gap transition occurs by applying strain. Especially, 1% strain is enough to transform the puckered arsenene into a direct-gap semiconductor. Our results will pave a way for applications to light-emitting diodes and solar cells.
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Puckered honeycomb Sb monolayer, the structural analog of black phosphorene, has been recently successfully grown by means of molecular beam epitaxy. However, little is known to date about the growth mechanism for such puckered honeycomb monolayer. In this study, by using scanning tunneling microscopy in combination with first-principles density functional theory calculations, we unveil that the puckered honeycomb Sb monolayer takes a kinetics-limited two-step growth mode. As the coverage of Sb increases, the Sb atoms firstly form the distorted hexagonal lattice as the half layer, and then the distorted hexagonal half-layer transforms into the puckered honeycomb lattice as the full layer. These results provide the atomic-scale insight in understanding the growth mechanism of puckered honeycomb monolayer, and can be instructive to the direct growth of other monolayers with the same structure.
textit{Ab-initio} calculations based on density functional theory (DFT) are performed to study the structural, electronic, and magnetic properties of two-dimensional (2D) free-standing honeycomb CrAs. We show that CrAs has low buckled stable structure. Magnetic CrAs has larger buckling than non-magnetic CrAs. 2D-CrAs is a ferromagnetic semiconductor for lattice constant $a leq 3.71$AA, and above this lattice constant CrAs is a half-metal ferromagnet. 2D-CrAs is shown to be half-metal ferromagnetic with magnetic moment of 3.0$mu_{rm{B}}$ per unit cell, at equilibrium structure. The $d_{z}^{2}$ orbital of $e_{g}$ band is completely empty in the spin-down state whereas it is almost occupied in the spin-up state, and the magnetic moment in the $e_{g}$ band is mainly dominated by the $d_{z}^{2}$ orbital of Cr. The $d_{zx}/d_{zy}$ and $d_{xy}$ orbitals of $t_{2g}$ band are partially occupied in the spin-up state and behaves as metal whereas they are insulator in the spin-down state. Phonon calculations confirm the thermodynamic stability of 2D-CrAs. The ferromagnetic (FM) and antiferromagnetic (AFM) interaction between the Cr atoms reveal that the FM state is more stable than the AFM state of 2D-CrAs.
The modes of vibrations in honeycomb and auxetic structures are studied, with models in which the lattice is represented by a planar network where sites are connected by strings and rigid rods. The auxetic network is obtained modifying a model proposed by Evans et al. in 1991, and used to explain the negative Poissons ratio of auxetic materials. This relevant property means that the materials have a lateral extension, instead to shrink, when they are stretched. For what concerns the acoustic properties of these structures, they absorb noise and vibrations more efficiently than non-auxetic equivalents. The acoustic and optical dispersions obtained in the case of the auxetic model are compared with the dispersions displayed by a conventional honeycomb network. It is possible to see that the phonon dispersions of the auxetic model possess a complete bandgap and that the Goldstone mode group velocity is strongly dependent on the direction of propagation. The presence of a complete bandgap can explain some experimental observations on the sound propagation properties of the auxetic materials.
Atomically thin two-dimensional (2D) crystals have gained tremendous attentions owing to their potential impacts to the future electronics technologies, as well as the exotic phenomena emerging in these materials. Monolayer of {alpha} phase Sb ({alpha}-antimonene) that shares the same puckered structure as black phosphorous, has been predicted to be stable with precious properties. However, the experimental realization still remains challenging. Here, we successfully grow high-quality monolayer {alpha}-antimonene, with the thickness finely controlled. The {alpha}-antimonene exhibits great stability upon exposure to air. Combining scanning tunneling microscope, density functional theory calculations and transport measurement, it is found that the electron band crossing the Fermi level exhibits a linear dispersion with a fairly small effective mass, and thus a good electrical conductivity. All of these properties make the {alpha}-antimonene promising in the future electronic applications.
Interlayer coupling between individual unit layers has played a critical role for layer-dependent properties in two-dimensional (2D) materials. While recent studies have revealed the significant degrees of interlayer interactions, the overall electronic structure of the 2D material has been mostly addressed by the intralayer interactions. Here, we report the direct observation of a highly dispersive single electronic band along the interlayer direction in puckered 2D PdSe2 as an experimental hallmark of strong interlayer couplings. Remarkably large band dispersion along kz-direction near Fermi level, which is even wider than the in-plane one, is observed by the angle-resolved photoemission spectroscopy measurement. Employing the X-ray absorption spectroscopy and density functional theory calculations, we reveal that the strong interlayer coupling in 2D PdSe2 originates from the unique directional bonding of Pd d orbitals associated with unexpected Pd 4d9 configuration, which consequently gives rise to the strong layer-dependency of the band gap.
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