No Arabic abstract
The broken inversion symmetry at the surface of a metallic film (or, more generally, at the interface between a metallic film and a different metallic or insulating material) greatly amplifies the influence of the spin-orbit interaction on the surface properties. The best known manifestation of this effect is the momentum-dependent splitting of the surface state energies (Rashba effect). Here we show that the same interaction also generates a spin-polarization of the bulk states when an electric current is driven through the bulk of the film. For a semi-infinite jellium model, which is representative of metals with a closed Fermi surface, we prove as a theorem that, regardless of the shape of the confinement potential, the induced surface spin density at each surface is given by ${bf S} =-gamma hbar {bf hat z}times {bf j}$, where ${bf j}$ is the particle current density in the bulk, ${bf hat z}$ the unit vector normal to the surface, and $gamma=frac{hbar}{4mc^2}$ contains only fundamental constants. For a general metallic solid $gamma$ becomes a material-specific parameter that controls the strength of the interfacial spin-orbit coupling. Our theorem, combined with an {it ab initio} calculation of the spin polarization of the current-carrying film, enables a determination of $gamma$, which should be useful in modeling the spin-dependent scattering of quasiparticles at the interface.
We extend the ab initio molecular dynamics (AIMD) method based on density functional theory to the nonequilibrium situation where an electronic current is present in the electronic system. The dynamics is treated using the semi-classical generalized Langevin equation. We demonstrate how the full anharmonic description of the inter-atomic forces is important in order to understand the current-induced heating and the energy distribution both in frequency and in real space.
We report on a first principles study of anti-ferromagnetic resonance (AFMR) phenomena in metallic systems [MnX (X=Ir,Pt,Pd,Rh) and FeRh] under an external electric field. We demonstrate that the AFMR linewidth can be separated into a relativistic component originating from the angular momentum transfer between the collinear AFM subsystem and the crystal through the spin orbit coupling (SOC), and an exchange component that originates from the spin exchange between the two sublattices. The calculations reveal that the latter component becomes significant in the low temperature regime. Furthermore, we present results for the current-induced intersublattice torque which can be separated into the Field-Like (FL) and Damping-Like (DL) components, affecting the intersublattice exchange coupling and AFMR linewidth, respectively.
A new concept realizing giant spin Nernst effect in nonmagnetic metallic films is introduced. It is based on the idea of engineering an asymmetric energy dependence of the longitudinal and transverse electrical conductivities, as well as a pronounced energy dependence of the spin Hall angle in the vicinity of the Fermi level by the resonant impurity states at the Fermi level. We employ an analytical model and demonstrate the emergence of a giant spin Nernst effect in Ag(111) films using {it ab-initio} calculations combined with the Boltzmann approach for transport properties arising from skew scattering off impurities.
We present a two-step method specifically tailored for band structure calculation of the small-angle moir{e}-pattern materials which contain tens of thousands of atoms in a unit cell. In the first step, the self-consistent field calculation for ground state is performed with $O(N)$ Krylov subspace method implemented in OpenMX. Secondly, the crystal momentum dependent Bloch Hamiltonian and overlap matrix are constructed from the results obtained in the first step and only a small number of eigenvalues near the Fermi energy are solved with shift-invert and Lanczos techniques. By systematically tuning two key parameters, the cutoff radius for electron hopping interaction and the dimension of Krylov subspace, we obtained the band structures for both rigid and corrugated twisted bilayer graphene structures at the first magic angle ($theta=1.08^circ$) and other three larger ones with satisfied accuracy on affordable costs. The band structures are in good agreement with those from tight binding models, continuum models, plane-wave pseudo-potential based $ab~initio$ calculations, and the experimental observations. This efficient two-step method is to play a crucial role in other twisted two-dimensional materials, where the band structures are much more complex than graphene and the effective model is hard to be constructed.
We investigate the current-induced spin-orbit torque in thin topological insulator (TI) films in the presence of hybridization between the top and bottom surface states. We formulate the relation between spin torque and TI thickness, from which we derived the optimal value of the thickness to maximize the torque. We show numerically that in typical TI thin films made of $mathrm{Bi_2Se_3}$, the optimal thickness is about 3-5 nm.