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Register a new userCritical Behavior of Four-Terminal Conductance of Bilayer Graphene Domain Walls
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Bilayer graphene in a perpendicular electric field can host domain walls between regions of reversed field direction or interlayer stacking. The gapless modes propagating along these domain walls, while not strictly topological, nevertheless have interesting physical properties, including valley-momentum locking. A junction where two domain walls intersect forms the analogue of a quantum point contact. We study theoretically the critical behavior of this junction near the pinch-off transition, which is controlled by two separate classes of non-trivial quantum critical points. For strong interactions, the junction can host phases of unique charge and valley conductances. For weaker interactions, the low-temperature charge conductance can undergo one of two possible quantum phase transitions, each characterized by a specific critical exponent and a collapse to a universal scaling function, which we compute.
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Measurement and theory of the two-terminal conductance of monolayer and bilayer graphene in the quantum Hall regime are compared. We examine features of conductance as a function of gate voltage that allow monolayer, bilayer, and gapped samples to be distinguished, including N-shaped distortions of quantum Hall plateaus and conductance peaks and dips at the charge neutrality point. Generally good agreement is found between measurement and theory. Possible origins of discrepancies are discussed.
We show that a domain wall separating single layer graphene (SLG) and AA-stacked bilayer graphene (AA-BLG) can be used to generate highly collimated electron beams which can be steered by a magnetic field. Such system exists in two distinct configurations, namely, locally delaminated AA-BLG and terminated AA-BLG whose terminal edge-type can be either zigzag or armchair. We investigate the electron scattering using semi-classical dynamics and verify the results independently with wave-packed dynamics simulations. We find that the proposed system supports two distinct types of collimated beams that correspond to the lower and upper cones in AA-BLG. Our computational results also reveal that collimation is robust against the number of layers connected to AA-BLG and terminal edges.
We investigate the electronic transport properties of unbiased and biased bilayer graphene nanoribbon in n-p and n-n junctions subject to a perpendicular magnetic field. Using the non-equilibrium Greens function method and the Landauer-B{u}ttiker formalism, the conductance is studied for the cases of clean, on-site, and edge disordered bilayer graphene. We show that the lowest Hall plateau remains unchanged in the presence of disorder, whereas asymmetry destroys both the plateaus and conductance quantization. In addition, we show that disorder induces an enhancement of the conductance in the n-p region in the presence of magnetic fields. Finally, we show that the equilibration of quantum Hall edge states between distinctively doped regions causes Hall plateaus to appear in the regime of complete mode mixing.
Twisted bilayer graphene (TBG) with interlayer twist angles near the magic angle $approx 1.08^{circ}$ hosts flat bands and exhibits correlated states including Mott-like insulators, superconductivity and magnetism. Here we report combined temperature-dependent transport measurements of the longitudinal and Hall resistivities in close to magic-angle TBG. While the observed longitudinal resistivity follows linear temperature $T$ dependence consistent with previous reports, the Hall resistance shows an anomalous $T$ dependence with the cotangent of the Hall angle cot $Theta{_H} propto T^2$. Boltzmann theory for quasiparticle transport predicts that both the resistivity and cot $Theta{_H}$ should have the same $T$ dependence, contradicting the observed behavior. This failure of quasiparticle-based theories is reminiscent of other correlated strange metals such as cuprates.
Domain walls, topological defects that define the frontier between regions of different stacking in multilayer graphene, have proved to host exciting physics. The ability of tuning these topological defects in-situ in an electronic transport experiment brings a wealth of possibilities in terms of fundamental understanding of domain walls as well as for electronic applications. Here, we demonstrate through a MEMS (micro-electromechanical system) actuator and magnetoresistance measurements the effect of domain walls in multilayer graphene quantum Hall effect. Reversible and controlled uniaxial strain triggers these topological defects, manifested as new quantum Hall effect plateaus as well as a discrete and reversible modulation of the current across the device. Our findings are supported by theoretical calculations and constitute the first indication of the in-situ tuning of topological defects in multilayer graphene probed through electronic transport, opening the way to the use of reversible topological defects in electronic applications.
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