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Register a new userHigh-performance bilayer metal-oxide thin film transistors using ultra-thin solution-processed ZrOx dielectric
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We reported here a high-performance In2O3/InZnO bilayer metal-oxide (BMO) thin-film transistor (TFT) using ultra-thin solution-processed ZrOx dielectric. A thin layer of In2O3 offers a higher carrier concentration, thereby maximizing the charge accumulation and yielding high carrier mobility. A thick layer of InZnO controls the charge conductance resulting in low off-state current and suitable threshold voltage. As a consequence, the BMO TFT showed higher filed-effect mobility (37.9 cm2/V s) than single-layer InZnO TFT (7.6 cm2/V s). More importantly, an on/off current ratio of 109, a subthreshold swing voltage of 120 mV/decade, as well as a threshold voltage shift (less than 0.4 V) under bias stress for 2.5 hours were obtained simultaneously. These promising properties are obtained at a low operation voltage of 3 V. This work demonstrates that the BMO TFT has great potential applications as switching transistor and low-power devices.
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The measurements of the high - temperature current - voltage characteristics of MoS2 thin - film transistors show that the devices remain functional to temperatures of at least as high as 500 K. The temperature increase results in decreased threshold voltage and mobility. The comparison of the DC and pulse measurements shows that the DC sub - linear and super - linear output characteristics of MoS2 thin - films devices result from the Joule heating and the interplay of the threshold voltage and mobility temperature dependences. At temperatures above 450 K, an intriguing phenomenon of the memory step - a kink in the drain current - occurs at zero gate voltage irrespective of the threshold voltage value. The memory step effect was attributed to the slow relaxation processes in thin films similar to those in graphene and electron glasses. The obtained results suggest new applications for MoS2 thin - film transistors in extreme - temperature electronics and sensors.
To clarify the electronic density of states (DOS) around the conduction band bottom for state of the art transparent amorphous oxide semiconductors (TAOSs), InGaZnO4 and In2MgO4, we fabricated TAOS-based transparent thin film transistors (TTFTs) and measured their gate voltage dependence of thermopower (S). TAOS-based TTFTs exhibit an unusual S behavior. The |S|-value abruptly increases, but then gradually decreases as Vg increases, clearly suggesting the anti-parabolic shaped DOS is hybridized with the original parabolic shaped DOS around the conduction band bottom.
High throughput experimental methods are known to accelerate the rate of research, development, and deployment of electronic materials. For example, thin films with lateral gradients in composition, thickness, or other parameters have been used alongside spatially-resolved characterization to assess how various physical factors affect material properties under varying measurement conditions. Similarly, multi-layer electronic devices that contain such graded thin films as one or more of their layers can also be characterized spatially in order to optimize the performance. In this work, we apply these high throughput experimental methods to thin film transistors (TFTs), demonstrating combinatorial device fabrication and semi-automated characterization using sputtered Indium-Gallium-Zinc-Oxide (IGZO) TFTs as a case study. We show that both extrinsic and intrinsic types of device gradients can be generated in a TFT library, such as channel thickness and length, channel cation compositions, and oxygen atmosphere during deposition. We also present a semi-automated method to measure the 44 devices fabricated on a 50x50mm substrate that can help to identify properly functioning TFTs in the library and finish the measurement in a short time. Finally, we propose a fully automated characterization system for similar TFT libraries, which can be coupled with high throughput data analysis. These results demonstrate that high throughput methods can accelerate the investigation of TFTs and other electronic devices.
Order-disorder processes fundamentally determine the structure and properties of many important oxide systems for energy and computing applications. While these processes have been intensively studied in bulk materials, they are less investigated and understood for nanostructured oxides in highly non-equilibrium conditions. These systems can now be realized through a range of deposition techniques and probed at exceptional spatial and chemical resolution, leading to a greater focus on interface dynamics. Here we survey a selection of recent studies of order-disorder behavior at thin film oxide interfaces, with a particular emphasis on the emergence of order during synthesis and disorder in extreme irradiation environments. We summarize key trends and identify directions for future study in this growing research area.
We present a theoretical study on the impact of an active optical layer on the emission properties of an ultrathin luminescent film. While the study can be generalized to any material, we focus here on a simple layered medium composed of a conjugated polymers (CPs) thin film, a zinc oxide layer (ZnO) and a sapphire substrate. The study spreads throughout variable aspects including the effect of the structure parameters on the CP luminescence and radiation pattern and more specifically the influence of the absorption and emission properties of the active layer. Comparing between the passive and active layer cases, the obtained results show that an enhancement of the CP luminescence of more than 20 times can be obtained by using an optically active underlying layer. The results can be explained in terms of photon recycling where the optically active layer acts as a photon reservoir and a secondary light source for the ultra thin film. This general concept is of a special interest for ultra-trace chemosensor.
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