No Arabic abstract
We study spin pumping in a $mathrm{Y_3Fe_5O_{12}(YIG)/Pt/Ni_{81}Fe_{19}(Py)}$ trilayer film by means of the inverse spin Hall effect (ISHE). When the ferromagnets are not excited simultaneously by a microwave, ISHE-induced voltage is of the opposite sign at each ferromagnetic resonance (FMR). The opposite sign is consistent with spin pumping of bilayer films. On the other hand, the voltage is of the same sign at each FMR when both the ferromagnets are excited simultaneously. Futhermore, the voltage greatly increases in magnitude. The observed voltage is unconventional; neither its sign nor magnitude can be expected from spin pumping of bilayer films. Control experiments show that the unconventional voltage is dominantly induced by spin pumping at the Py/Pt interface. Interaction between YIG and Py layers is a possible origin of the unconventional voltage.
A recent theory by Chen and Zhang [Phys. Rev. Lett. 114, 126602 (2015)] predicts strongly anisotropic damping due to interfacial spin-orbit coupling in ultrathin magnetic films. Interfacial Gilbert-type relaxation, due to the spin pumping effect, is predicted to be significantly larger for magnetization oriented parallel to compared with perpendicular to the film plane. Here, we have measured the anisotropy in the Pt/Ni$_{81}$Fe$_{19}$/Pt system via variable-frequency, swept-field ferromagnetic resonance (FMR). We find a very small anisotropy of enhanced Gilbert damping with sign opposite to the prediction from the Rashba effect at the FM/Pt interface. The results are contrary to the predicted anisotropy and suggest that a mechanism separate from Rashba spin-orbit coupling causes the rapid onset of spin-current absorption in Pt.
The temperature dependence of exchange bias properties are studied in polycrystalline $ mathrm{BiFeO_3} / mathrm{Ni_{81}Fe_{19}} $ bilayers, for different $ mathrm{BiFeO_3} $ thicknesses. Using a field cooling protocol, a non-monotonic behavior of the exchange bias field is shown in the exchange-biased bilayers. Another thermal protocol, the Soeya protocol, related to the $ mathrm{BiFeO_3} $ thermal activation energies was carried out and reveals a two-step evolution of the exchange bias field. The results of these two different protocols are similar to the ones obtained for measurements previously reported on epitaxial $ mathrm{BiFeO_3} $, indicating a driving mechanism independent of the long-range crystalline arrangement (i.e., epitaxial or polycrystalline). An intrinsic property of $ mathrm{BiFeO_3} $ is proposed as being the driving mechanism for the thermal dependent magnetization reversal: the canting of the $ mathrm{BiFeO_3} $ spins leading to a biquadratic contribution to the exchange coupling. The temperature dependence of the magnetization reversal angular behavior agrees with the presence of such a biquadratic contribution for exchange biased bilayers studied here.
We report an increase of up to 60% on the count rates of the rare $^{81}mathrm{Kr}$ and $^{85}mathrm{Kr}$ isotopes in the Atom Trap Trace Analysis method by enhancing the production of metastable atoms in the discharge source. Additional atoms in the metastable $ 1s_5 $ level (Paschen notation) are obtained via optically pumping the $1s_4-2p_6$ transition at 819 nm. By solving the master equation for the system, we identify this transition to be the most suitable one and can describe the measured increase in metastable population as a function of the 819-nm laser power. We calculate the previously unknown isotope shifts and hyperfine splittings of the $1s_4-2p_6$ transition in $^{81}mathrm{Kr}$ and $^{85}mathrm{Kr}$, and verify the results with count rate measurements. The demonstrated count-rate increase enables a corresponding decrease in the required sample sizes for $^{81}mathrm{Kr}$ and $^{85}mathrm{Kr}$ dating, a significant improvement for applications such as dating of ocean water and deep ice cores.
Using ab initio calculations and special quasirandom structures, we have characterized the distribution of defect formation energy and migration barrier in Ni-based solid-solution alloys: Ni_{0.5}Co_{0.5}, Ni_{0.5}Fe_{0.5}, Ni_{0.8}Fe_{0.2} and Ni_{0.8}Cr_{0.2}. As defect formation energies depend sensitively on elemental chemical potential, we have developed a computationally efficient method for determining it which takes into account the global composition and local short-range order. We find that Fe has the biggest alloy effects for Ni among these four elements. Our results show that the distribution of migration energies for vacancies and interstitial have a region of overlap, which will facilitate the recombination between them.
An experimental study of the in-plane azimuthal behaviour and frequency dependence of the ferromagnetic resonance field and the resonance linewidth as a function of BiFeO$_3$ thickness is carried out in a polycrystalline exchange-biased BiFeO$_3$/Ni$_{81}$Fe$_{19}$ system. The magnetization decrease of the Pt/BiFeO$_3$/Ni$_{81}$Fe$_{19}$/Pt heterostructures with BiFeO$_3$ thickness deduced from static measurements has been confirmed by dynamic investigations. Ferromagnetic resonance measurements have shown lower gyromagnetic ratio in a perpendicular geometry compared with that of a parallel geometry. The monotonous decrease of gyromagnetic ratio in a perpendicular geometry as a function of the BiFeO$_3$ film thickness seems to be related to the spin-orbit interactions due to the neighbouring Pt film at its interface with Ni$_{81}$Fe$_{19}$ film. The in-plane azimuthal shape of the total linewidth of the uniform mode shows isotropic behaviour that increases with BiFeO$_3$ thickness. The study of the frequency dependence of the resonance linewidth in a broad band of 3 to 35 GHz has allowed the determination of intrinsic and extrinsic contributions to the relaxation as function of BiFeO$_3$ thickness in perpendicular geometries. In our system the magnetic relaxation is dominated by the spin-pumping mechanism due to the presence of Pt. The insertion of BiFeO$_3$ between Pt and Ni$_{81}$Fe$_{19}$ attenuates the spin-pumping damping at one interface.