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Register a new userElectrical transport properties of small diameter single-walled carbon nanotubes aligned on ST-cut quartz substrates
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A method is introduced to isolate and measure the electrical transport properties of individual single-walled carbon nanotubes (SWNTs) aligned on an ST-cut quartz, from room temperature down to 2 K. The diameter and chirality of the measured SWNTs are accurately defined from Raman spectroscopy and atomic force microscopy (AFM). A significant up-shift in the G-band of the resonance Raman spectra of the SWNTs is observed, which increases with increasing SWNTs diameter, and indicates a strong interaction with the quartz substrate. A semiconducting SWNT, with diameter 0.84 nm, shows Tomonaga-Luttinger liquid and Coulomb blockade behaviors at low temperatures. Another semiconducting SWNT, with a thinner diameter of 0.68 nm, exhibits a transition from the semiconducting state to an insulating state at low temperatures. These results elucidate some of the electrical properties of SWNTs in this unique configuration and help pave the way towards prospective device applications.
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We have contacted single-walled carbon nanotubes after aligning the tubes by the use of surface acoustic waves. The acoustoelectric current has been measured at 4.2 K and a probing of the low-dimensional electronic states by the surface acoustic wave has been detected. By decreasing the acoustic wavelength resulting in an adjustment to the length of the defined carbon nanotube constriction a quantization of the acoustoelectric current has been observed.
The dynamical conductance of electrically contacted single-walled carbon nanotubes is measured from dc to 10 GHz as a function of source-drain voltage in both the low-field and high-field limits. The ac conductance of the nanotube itself is found to be equal to the dc conductance over the frequency range studied for tubes in both the ballistic and diffusive limit. This clearly demonstrates that nanotubes can carry high-frequency currents at least as well as dc currents over a wide range of operating conditions. Although a detailed theoretical explanation is still lacking, we present a phenomenological model of the ac impedance of a carbon nanotube in the presence of scattering that is consistent with these results.
We present a novel floating catalyst synthesis route for individual, i.e. non-bundled, small diameter single-walled carbon nanotubes (SWCNTs) with a narrow chiral angle distribution peaking at high chiralities near the armchair species. An ex situ spark discharge generator was used to form iron particles with geometric number mean diameters of 3-4 nm and fed into a laminar flow chemical vapour deposition reactor for the continuous synthesis of long and high-quality SWCNTs from ambient pressure carbon monoxide. The intensity ratio of G/D peaks in Raman spectra up to 48 and mean tube lengths up to 4 microns were observed. The chiral distributions, as directly determined by electron diffraction in the transmission electron microscope, clustered around the (n,m) indices (7,6), (8,6), (8,7) and (9,6), with up to 70% of tubes having chiral angles over 20{deg}. The mean diameter of SWCNTs was reduced from 1.10 to 1.04 nm by decreasing the growth temperature from 880 to 750 {deg}C, which simultaneously increased the fraction of semiconducting tubes from 67 to 80%. Limiting the nanotube gas phase number concentration to approx. 100 000 per cubic centimetre successfully prevented nanotube bundle formation that is due to collisions induced by Brownian diffusion. Up to 80 % of 500 as-deposited tubes observed by atomic force and transmission electron microscopy were individual. Transparent conducting films deposited from these SWCNTs exhibited record low sheet resistances of 63 Ohms/sq. at 90 % transparency for 550 nm light.
We report measurements of the temperature and gate voltage dependence for individual bundles (ropes) of single-walled nanotubes. When the conductance is less than about e^2/h at room temperature, it is found to decrease as an approximate power law of temperature down to the region where Coulomb blockade sets in. The power-law exponents are consistent with those expected for electron tunneling into a Luttinger liquid. When the conductance is greater than e^2/h at room temperature, it changes much more slowly at high temperatures, but eventually develops very large fluctuations as a function of gate voltage when sufficiently cold. We discuss the interpretation of these results in terms of transport through a Luttinger liquid.
We report experimental measurements of electronic Raman scattering under resonant conditions by electrons in individual single-walled carbon nanotubes (SWNTs). The inelastic Raman scattering at low frequency range reveals a single particle excitation feature and the dispersion of electronic structure around the center of Brillouin zone of a semiconducting SWNT (14, 13) is extracted.
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