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Register a new userReducing influence of antiferromagnetic interactions on ferromagnetic properties of p-(Cd,Mn)Te quantum wells
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Added by
Constantinos Simserides Prof.
Publication date
2013
fields
Physics
and research's language is
English
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In order to explain the absence of hysteresis in ferromagnetic p-type (Cd,Mn)Te quantum wells (QWs), spin dynamics was previously investigated by Monte Carlo simulations combining the Metropolis algorithm with the determination of hole eigenfunctions at each Monte Carlo sweep. Short-range antiferromagnetic superexchange interactions between Mn spins - which compete with the hole-mediated long-range ferromagnetic coupling - were found to accelerate magnetization dynamics if the the layer containing Mn spins is wider than the vertical range of the hole wave function. Employing this approach it is shown here that appreciate magnitudes of remanence and coercivity can be obtained if Mn ions are introduced to the quantum well in a delta-like fashion.
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In order to single out dominant phenomena that account for carrier-controlled magnetism in p-(Cd,Mn)Te quantum wells we have carried out magneto-optical measurements and Monte Carlo simulations of time dependent magnetization. The experimental results show that magnetization relaxation is faster than 20 ns in the paramagnetic state. Decreasing temperature below the Curie temperature Tc results in an increase of the relaxation time but to less than 10 micro seconds. This fast relaxation may explain why the spontaneous spin splitting of electronic states is not accompanied by the presence of non-zero macroscopic magnetization below Tc. Our Monte Carlo results reproduce the relative change of the relaxation time on decreasing temperature. At the same time, the numerical calculations demonstrate that antiferromagnetic spin-spin interactions, which compete with the hole-mediated long-range ferromagnetic coupling, play an important role in magnetization relaxation of the system. We find, in particular, that magnetization dynamics is largely accelerated by the presence of antiferromagnetic couplings to the Mn spins located outside the region, where the holes reside. This suggests that macroscopic spontaneous magnetization should be observable if the thickness of the layer containing localized spins will be smaller than the extension of the hole wave function. Furthermore, we study how a spin-independent part of the Mn potential affects Tc. Our findings show that the alloy disorder potential tends to reduce Tc, the effect being particularly strong for the attractive potential that leads to hole localization.
Microphotoluminescence mapping experiments were performed on a modulation doped (Cd,Mn)Te quantum well exhibiting carrier induced ferromagnetism. The zero field splitting that reveals the presence of a spontaneous magnetization in the low-temperature phase, is measured locally; its fluctuations are compared to those of the spin content and of the carrier density, also measured spectroscopically in the same run. We show that the fluctuations of the carrier density are the main mechanism responsible for the fluctuations of the spontaneous magnetization in the ferromagnetic phase, while those of the Mn spin density have no detectable effect at this scale of observation.
The evolution of the magnetization in (Cd,Mn)Te quantum wells after a short pulse of magnetic field was determined from the giant Zeeman shift of spectroscopic lines. The dynamics in absence of magnetic field was found to be up to three orders of magnitude faster than that at 1 T. Hyperfine interaction and strain are mainly responsible for the fast decay. The influence of a hole gas is clearly visible: at zero field anisotropic holes stabilize the system of Mn ions, while in a magnetic field of 1 T they are known to speed up the decay by opening an additional relaxation channel.
Coherent optical spectroscopy such as four-wave mixing and photon echo generation deliver detailed information on the energy levels involved in optical transitions through the analysis of polarization of the coherent response. In semiconductors, it can be applied to distinguish between different exciton complexes, which is a highly non-trivial problem in optical spectroscopy. We develop a simple approach based on photon echo polarimetry, in which polar plots of the photon echo amplitude are measured as function of the angle $varphi$ between the linear polarizations of the two exciting pulses. The rosette-like polar plots reveal a distinct difference between the neutral and charged exciton (trion) optical transitions in semiconductor nanostructures. We demonstrate this experimentally by photon echo polarimetry of a 20-nm-thick CdTe/(Cd,Mg)Te quantum well at temperature of 1.5~K. Applying narrow-band optical excitation we selectively excite different exciton complexes including the exciton, the trion, and the donor-bound exciton D$^0$X. We find that polarimetry of the photon echo on the trion and D$^0$X is substantially different from the exciton: The echoes of the trion and D$^0$X are linearly polarized at the angle $2varphi$ with respect to the first pulse polarization and their amplitudes are weakly dependent on $varphi$. While on the exciton the photon echo is co-polarized with the second exciting pulse and its amplitude scales as $cosvarphi$.
The quantum Hall effect is usually observed when the two-dimensional electron gas is subjected to an external magnetic field, so that their quantum states form Landau levels. In this work we predict that a new phenomenon, the quantum anomalous Hall effect, can be realized in Hg$_{1-y}$Mn$_{y}$Te quantum wells, without the external magnetic field and the associated Landau levels. This effect arises purely from the spin polarization of the $Mn$ atoms, and the quantized Hall conductance is predicted for a range of quantum well thickness and the concentration of the $Mn$ atoms. This effect enables dissipationless charge current in spintronics devices.
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