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Register a new userTheory of the Room-Temperature QHE in Graphene
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The unusual quantum Hall effect (QHE) in graphene is often discussed in terms of Dirac fermions moving with a linear dispersion relation. The same phenomenon will be explained in terms of the more traditional composite bosons, which move with a linear dispersion relation. The electron (wave packet) moves easier in the direction [1,1,0,c-axis] = [1,1,0] of the honeycomb lattice than perpendicular to it, while the hole moves easier in [0,0,1]. Since electrons and holes move in different channels, the number densities can be high especially when the Fermi surface has necks. The strong QHE arises from the phonon exchange attraction in the neighborhood of the neck Fermi surfaces. The plateau observed for the Hall conductivity and the accompanied resistivity drop is due to the Bose-Einstein condensation of the c-bosons, each forming from a pair of one-electron--two-fluxons c-fermions by phonon-exchange attraction.
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Devices made from graphene encapsulated in hexagonal boron-nitride exhibit pronounced negative bend resistance and an anomalous Hall effect, which are a direct consequence of room-temperature ballistic transport on a micrometer scale for a wide range of carrier concentrations. The encapsulation makes graphene practically insusceptible to the ambient atmosphere and, simultaneously, allows the use of boron nitride as an ultrathin top gate dielectric.
Graphene is a powerful playground for studying a plethora of quantum phenomena. One of the remarkable properties of graphene arises when it is strained in particular geometries and the electrons behave as if they were under the influence of a magnetic field. Previously, these strain-induced pseudomagnetic fields have been explored on the nano- and micrometer-scale using scanning probe and transport measurements. Heteroepitaxial strain, in contrast, is a wafer-scale engineering method. Here, we show that pseudomagnetic fields can be generated in graphene through wafer-scale epitaxial growth. Shallow triangular nanoprisms in the SiC substrate generate strain-induced uniform fields of 41 T. This enables the observation of strain-induced Landau levels at room temperature, as detected by angle-resolved photoemission spectroscopy, and confirmed by model calculations and scanning tunneling microscopy measurements. Our work demonstrates the feasibility of exploiting strain-induced quantum phases in two-dimensional Dirac materials on a wafer-scale platform, opening the field to new applications.
Nanoparticles of superconducting YBa2Cu3O7-delta (YBCO) (Tc = 91 K) exhibit ferromagnetism at room temperature while the bulk YBCO, obtained by heating the nanoparticles at high temperature (940 degree C), shows a linear magnetization curve. Across the superconducting transition temperature, the magnetization curve changes from that of a soft ferromagnet to a superconductor. Furthermore, our experiments reveal that not only nanoparticles of metal oxides but also metal nitrides such as NbN (Tc = 6 - 12 K) and delta-MoN (Tc ~ 6 K) exhibit room-temperature ferromagnetism.
Graphene is ideally suited for photonic and optoelectronic applications, with a variety of photodetectors (PDs) in the visible, near-infrared (NIR), and THz reported to date, as well as thermal detectors in the mid-infrared (MIR). Here, we present a room temperature-MIR-PD where the pyroelectric response of a LiNbO3 crystal is transduced with high gain (up to 200) into resistivity modulation for graphene, leading to a temperature coefficient of resistance up to 900%/K, two orders of magnitude higher than the state of the art, for a device area of 300x300um2. This is achieved by fabricating a floating metallic structure that concentrates the charge generated by the pyroelectric substrate on the top-gate capacitor of the graphene channel. This allows us to resolve temperature variations down to 15umK at 1 Hz, paving the way for a new generation of detectors for MIR imaging and spectroscopy
We report on experimental studies of terahertz (THz) radiation transmission through grating-gate graphene-channel transistor nanostructures and demonstrate room temperature THz radiation amplification stimulated by current-driven plasmon excitations. Specifically, with increase of the direct current (dc) under periodic charge density modulation, we observe a strong red shift of the resonant THz plasmon absorption, its complete bleaching, followed by the amplification and blue shift of the resonant plasmon frequency. Our results are, to the best of our knowledge, the first experimental observation of energy transfer from dc current to plasmons leading to THz amplification. We present a simple model allowing for the phenomenological description of the observed amplification phenomena. This model shows that in the presence of dc current the radiation-induced correction to dissipation is sensitive to the phase shift between THz oscillations of carrier density and drift velocity, and with increase of the current becomes negative, leading to amplification. The experimental results of this work as all obtained at room temperature, pave the way towards the new 2D plasmons based, voltage tuneable THz radiation amplifiers.
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