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Register a new userUltralow-current-density and bias-field-free spin-transfer nano-oscillator
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The spin-transfer nano-oscillator (STNO) offers the possibility of using the transfer of spin angular momentum via spin-polarized currents to generate microwave signals. However, at present STNO microwave emission mainly relies on both large drive currents and external magnetic fields. These issues hinder the implementation of STNOs for practical applications in terms of power dissipation and size. Here, we report microwave measurements on STNOs built with MgO-based magnetic tunnel junctions having a planar polarizer and a perpendicular free layer, where microwave emission with large output power, excited at ultralow current densities, and in the absence of any bias magnetic fields is observed. The measured critical current density is over one order of magnitude smaller than previously reported. These results suggest the possibility of improved integration of STNOs with complementary metal-oxide-semiconductor technology, and could represent a new route for the development of the next-generation of on-chip oscillators.
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Energy loss due to ohmic heating is a major bottleneck limiting down-scaling and speed of nano-electronic devices, and harvesting ohmic heat for signal processing is a major challenge in modern electronics. Here we demonstrate that thermal gradients arising from ohmic heating can be utilized for excitation of coherent auto-oscillations of magnetization and for generation of tunable microwave signals. The heat-driven dynamics is observed in $mathrm{Y_{3}Fe_{5}O_{12}/Pt}$ bilayer nanowires where ohmic heating of the Pt layer results in injection of pure spin current into the $mathrm{Y_{3}Fe_{5}O_{12}}$ layer. This leads to excitation of auto-oscillations of the $mathrm{Y_{3}Fe_{5}O_{12}}$ magnetization and generation of coherent microwave radiation. Our work paves the way towards spin caloritronic devices for microwave and magnonic applications.
The use of spin transfer nano-oscillators (STNOs) to generate microwave signal in nanoscale devices have aroused tremendous and continuous research interest in recent years. Their key features are frequency tunability, nanoscale size, broad working temperature, and easy integration with standard silicon technology. In this feature article, we give an overview of recent developments and breakthroughs in the materials, geometry design and properties of STNOs. We focus in more depth on our latest advances in STNOs with perpendicular anisotropy showing a way to improve the output power of STNO towards the {mu}W range. Challenges and perspectives of the STNOs that might be productive topics for future research were also briefly discussed.
Spin torque and spin Hall effect nanooscillators generate high intensity spin wave auto oscillations on the nanoscale enabling novel microwave applications in spintronics, magnonics, and neuromorphic computing. For their operation, these devices require externally generated spin currents either from an additional ferromagnetic layer or a material with a high spin Hall angle. Here we demonstrate highly coherent field and current tunable microwave signals from nanoconstrictions in single 15 and 20 nm thick permalloy layers. Using a combination of spin torque ferromagnetic resonance measurements, scanning microBrillouin light scattering microscopy, and micromagnetic simulations, we identify the autooscillations as emanating from a localized edge mode of the nanoconstriction driven by spin orbit torques. Our results pave the way for greatly simplified designs of auto oscillating nanomagnetic systems only requiring a single ferromagnetic layer.
Spin transfer torque nano-oscillators are potential candidates for replacing the traditional inductor based voltage controlled oscillators in modern communication devices. Typical oscillator designs are based on trilayer magnetic tunnel junctions which are disadvantaged by low power outputs and poor conversion efficiencies. In this letter, we theoretically propose to use resonant spin filtering in pentalayer magnetic tunnel junctions as a possible route to alleviate these issues and present device designs geared toward a high microwave output power and an efficient conversion of the d.c. input power. We attribute these robust qualities to the resulting non-trivial spin current profiles and the ultra high tunnel magnetoresistance, both arising from resonant spin filtering. The device designs are based on the nonequilibrium Greens function spin transport formalism self-consistently coupled with the stochastic Landau-Lifshitz-Gilbert-Slonczewskis equation and the Poissons equation. We demonstrate that the proposed structures facilitate oscillator designs featuring a large enhancement in microwave power of around $775%$ and an efficiency enhancement of over $1300%$ in comparison with typical trilayer designs. We also rationalize the optimum operating regions via an analysis of the dynamic and static device resistances. This work sets stage for pentalyer spin transfer torque nano-oscillator device designs that extenuate most of the issues faced by the typical trilayer designs.
The oscillation properties of a spin torque oscillator consisting of a perpendicularly magnetized free layer and an in-plane magnetized pinned layer are studied based on an analysis of the energy balance between spin torque and damping. The critical value of an external magnetic field applied normal to the film plane is found, below which the controllable range of the oscillation frequency by the current is suppressed. The value of the critical field depends on the magnetic anisotropy, the saturation magnetization, and the spin torque parameter.
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