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The p-n junction has provided the basis for the semiconductor-device industry. Investigations of p-n junctions based on Mott insulators is still in its infancy. Layered Mott insulators, such as the cuprates or other transition metal-oxides, present a special challenge since strong in-plane correlations are important. Here we model the planes carefully using plaquette Cellular Dynamical Mean Field Theory with an exact diagonalization solver. The energy associated with inter-plane hopping is neglected compared with the long-range Coulomb interaction that we treat in the Hartree-Fock approximation. Within this new approach, Dynamical Layer Theory, the charge redistribution is obtained at the final step from minimization of a function of the layer fillings. A simple analytical description of the solution, in the spirit of Thomas-Fermi theory, reproduces quite accurately the numerical results. Various interesting charge reconstructions can be obtained by varying the Fermi energy differences between both sides of the junction. One can even obtain quasi-two dimensional charge carriers at the interface, in the middle of a Mott insulating layer. The density of states as a function of position does not follow the simple band bending picture of semiconductors.
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Recent research in two-dimensional (2D) materials has boosted a renovated interest in the p-n junction, one of the oldest electrical components which can be used in electronics and optoelectronics. 2D materials offer remarkable flexibility to design novel p-n junction device architectures, not possible with conventional bulk semiconductors. In this Review we thoroughly describe the different 2D p-n junction geometries studied so far, focusing on vertical (out-of-plane) and lateral (in-plane) 2D junctions and on mixed-dimensional junctions. We discuss the assembly methods developed to fabricate 2D p-n junctions making a distinction between top-down and bottom-up approaches. We also revise the literature studying the different applications of these atomically thin p-n junctions in electronic and optoelectronic devices. We discuss experiments on 2D p-n junctions used as current rectifiers, photodetectors, solar cells and light emitting devices. The important electronics and optoelectronics parameters of the discussed devices are listed in a table to facilitate their comparison. We conclude the Review with a critical discussion about the future outlook and challenges of this incipient research field.
We show that strong electron-electron interactions in cavity-coupled quantum materials can enable collectively enhanced light-matter interactions with ultrastrong effective coupling strengths. As a paradigmatic example we consider a Fermi-Hubbard model coupled to a single-mode cavity and find that resonant electron-cavity interactions result in the formation of a quasi-continuum of polariton branches. The vacuum Rabi splitting of the two outermost branches is collectively enhanced and scales with $g_{text{eff}}proptosqrt{2L}$, where $L$ is the number of electronic sites, and the maximal achievable value for $g_{text{eff}}$ is determined by the volume of the unit cell of the crystal. We find that $g_{text{eff}}$ for existing quantum materials can by far exceed the width of the first excited Hubbard band. This effect can be experimentally observed via measurements of the optical conductivity and does not require ultra-strong coupling on the single-electron level. Quantum correlations in the electronic ground state as well as the microscopic nature of the light-matter interaction enhance the collective light-matter interaction compared to an ensemble of independent two-level atoms interacting with a cavity mode.
Electrical transport in three dimensional topological insulators(TIs) occurs through spin-momentum locked topological surface states that enclose an insulating bulk. In the presence of a magnetic field, surface states get quantized into Landau levels giving rise to chiral edge states that are naturally spin-polarized due to spin momentum locking. It has been proposed that p-n junctions of TIs in the quantum Hall regime can manifest unique spin dependent effects, apart from forming basic building blocks for highly functional spintronic devices. Here, for the first time we study electrostatically defined n-p-n junctions of bulk insulating topological insulator BiSbTe$_{1.25}$Se$_{1.75}$ in the quantum Hall regime. We reveal the remarkable quantization of longitudinal resistance into plateaus at 3/2 and 2/3 h/e$^2$, apart from several partially developed fractional plateaus. Theoretical modeling combining the electrostatics of the dual gated TI n-p-n junction with Landauer Buttiker formalism for transport through a network of chiral edge states explains our experimental data, while revealing remarkable differences from p-n junctions of graphene and two-dimensional electron gas systems. Our work not only opens up a route towards exotic spintronic devices but also provides a test bed for investigating the unique signatures of quantum Hall effects in topological insulators.
Spatial separation of electrons and holes in graphene gives rise to existence of plasmon waves confined to the boundary region. Theory of such guided plasmon modes within hydrodynamics of electron-hole liquid is developed. For plasmon wavelengths smaller than the size of charged domains plasmon dispersion is found to be omega ~ q^(1/4). Frequency, velocity and direction of propagation of guided plasmon modes can be easily controlled by external electric field. In the presence of magnetic field spectrum of additional gapless magnetoplasmon excitations is obtained. Our findings indicate that graphene is a promising material for nanoplasmonics.
The phase diagram of the layered organic superconductor $kappa$-(ET)$_{2}$Cu[N(CN)$_{2}$]Cl has been accurately measured from a combination of $^{1}$H NMR and AC susceptibility techniques under helium gas pressure. The domains of stability of antiferromagnetic and superconducting long-range orders in the pressure {it vs} temperature plane have been determined. Both phases overlap through a first-order boundary that separates two regions of inhomogeneous phase coexistence. The boundary curve is found to merge with another first order line related to the metal-insulator transition in the paramagnetic region. This transition is found to evolve into a crossover regime above a critical point at higher temperature. The whole phase diagram features a point-like region where metallic, insulating, antiferromagnetic and non s-wave superconducting phases all meet.
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