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Anisotropic spin-dynamics in the Kondo semiconductor CeRu2Al10

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 Added by Jean-Michel Mignot
 Publication date 2012
  fields Physics
and research's language is English




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Spin dynamics in the new Kondo insulator compound CeRu2Al10 has been studied using unpolarized and polarized neutron scattering on single crystals. In the unconventional ordered phase forming below T0 = 27.3 K, two excitation branches are observed with significant intensities, the lower one of which has a gap of 4.8 +/- 0.3 meV and a pronounced dispersion up to about 8.5 meV. Comparison with RPA magnon calculations assuming crystal-field and anisotropic exchange couplings captures major aspects of the data, but leaves unexplained discrepancies, pointing to a key role of direction-specific hybridization between 4f and conduction band states in this compound.



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124 - F. Strigari , T. Willers , Y. Muro 2012
We have succeeded in establishing the crystal-field ground state of CeRu2Al10, an orthorhombic intermetallic compound recently identified as a Kondo insulator. Using polarization dependent soft x-ray absorption spectroscopy at the Ce M4,5 edges, together with input from inelastic neutron and magnetic susceptibility experiments, we were able to determine unambiguously the orbital occupation of the 4f shell and to explain quantitatively both the measured magnetic moment along the easy a axis and the small ordered moment along the c-axis. The results provide not only a platform for a realistic modeling of the spin and charge gap of CeRu2Al10, but demonstrate also the potential of soft x-ray absorption spectroscopy to obtain information not easily accessible by neutron techniques for the study of Kondo insulators in general.
We report temperature-dependent polarized optical conductivity [$sigma(omega)$] spectra of CeFe$_2$Al$_{10}$, which is a reference material for CeRu$_2$Al$_{10}$ and CeOs$_2$Al$_{10}$ with an anomalous magnetic transition at 28 K. The $sigma(omega)$ spectrum along the b-axis differs greatly from that in the $ac$-plane, indicating that this material has an anisotropic electronic structure. At low temperatures, in all axes, a shoulder structure due to the optical transition across the hybridization gap between the conduction band and the localized $4f$ states, namely $c$-$f$ hybridization, appears at 55 meV. However, the gap opening temperature and the temperature of appearance of the quasiparticle Drude weight are strongly anisotropic indicating the anisotropic Kondo temperature. The strong anisotropic nature in both electronic structure and Kondo temperature is considered to be relevant the anomalous magnetic phase transition in CeRu$_2$Al$_{10}$ and CeOs$_2$Al$_{10}$.
We investigate the periodic Anderson model with $bm{k}$-dependent $c$-$f$ mixing reproducing the point nodes of the hybridization gap by using the dynamical mean-field theory combined with the exact diagonalization method. At low temperature below a coherence temperature $T_0$, the imaginary part of the self-energy is found to be proportional to $T^2$ and the pseudogap with two characteristic energies $tilde{it Delta}_1$ and $tilde{it Delta}_2$ is clearly observed for $Tll T_0$, while the pseudogap is smeared with increasing $T$ and then disappears at high temperature $T simg T_0$ due to the evolution of the imaginary self-energy. When the Coulomb interaction between $f$ electrons $U$ increases, $tilde{it Delta}_1$, $tilde{it Delta}_2$, and $T_0$ together with $T_{rm max}$ at which the magnetic susceptibility is maximum decrease in proportion to the renormalization factor $Z$ resulting in a heavy-fermion semiconductor with a large mass enhancement $m^*/m=Z^{-1}$ for large $U$. We also examine the effect of the external magnetic field $H$ and find that the magnetization $M$ shows two metamagnetic anomalies $H_1$ and $H_2$ corresponding to $tilde{it Delta}_1$ and $tilde{it Delta}_2$ which are reduced due to the effect of $H$ together with $Z$. Remarkably, $Z^{-1}$ is found to be largely enhanced due to $H$ especially for $H_1 siml H siml H_2$, where the field induced heavy-fermion state is realized. The obtained results seem to be consistent with the experimental results observed in the anisotropic Kondo semiconductors such as CeNiSn.
We investigate the magnetic field effect on the spin gap state in CeRu2Al10 by measuring the magnetization and electrical resistivity. We found that the magnetization curve for the magnetic field H//c shows a metamagnetic-like anomaly at H*~4 T below T_0=27 K, but no anomaly for H//a and H//b. A shoulder of the electrical resistivity at Ts~5 K for I//c is suppressed by applying a longitudinal magnetic field above 5 T. Many anomalies are also found in the magnetoresistance for Hkc below ~5 K. The obtained magnetic phase diagram consists of at least two or three phases below T_0. These results strongly indicate the existence of a fine structure at a low energy side in a spin gap state with the excitation energy of 8 meV recently observed in the inelastic neutron scattering experiments.
The recent discovery of magnetic topological insulators has opened new avenues to explore exotic states of matter that can emerge from the interplay between topological electronic states and magnetic degrees of freedom, be it ordered or strongly fluctuating. Motivated by the effects that the dynamics of the magnetic moments can have on the topological surface states, we investigate the magnetic fluctuations across the (MnBi$_{text{2}}$Te$_{text{4}}$)(Bi$_{text{2}}$Te$_{text{3}}$)$_{text{n}}$ family. Our paramagnetic electron spin resonance experiments reveal contrasting Mn spin dynamics in different compounds, which manifests in a strongly anisotropic Mn spin relaxation in MnBi$_{text{2}}$Te$_{text{4}}$ while being almost isotropic in MnBi$_{text{4}}$Te$_{text{7}}$. Our density-functional calculations explain these striking observations in terms of the sensitivity of the local electronic structure to the Mn spin-orientation, and indicate that the anisotropy of the magnetic fluctuations can be controlled by the carrier density, which may directly affect the electronic topological surface states.
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