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Register a new userSpin-Polarized Ground States and Ferromagnetic Order Induced by Low-Coordinated Surface Atoms and Defects in Nanoscale Magnesium Oxide
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We investigate the effect of low-coordinated surface atoms on the defect-induced magnetism in MgO nanocrystallites using hybrid density functional theory calculations. It has been demonstrated that when Mg vacancies are introduced at the corners of cube-like MgO clusters, a magnetic state becomes lower in total energy than the nonmagnetic singlet state by 1-2 eV, resulting in the spin-polarized ground state. The spin density is not only located at the surrounding O atoms neighbor to the corner Mg vacancy site but is also extended to the distant (1 nm or longer) low-coordinated surface O atoms along the <110> directions. This directional spin delocalization allows a remote Mg vacancy-Mg vacancyinteraction, eventually leading to a spontaneous long-range ferromagnetic interaction.
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Voltage induced magnetization dynamics of magnetic thin films is a valuable tool to study anisotropic fields, exchange couplings, magnetization damping and spin pumping mechanism. A particularly well established technique is the ferromagnetic resonance (FMR) generated by the coupling of microwave photons and magnetization eigenmodes in the GHz range. Here we review the basic concepts of the so-called acoustic ferromagnetic resonance technique (a-FMR) induced by the coupling of surface acoustic waves (SAW) and magnetization of thin films. Interestingly, additional to the benefits of the microwave excited FMR technique, the coupling between SAW and magnetization also offers fertile ground to study magnon-phonon and spin rotation couplings. We describe the in-plane magnetic field angle dependence of the a-FMR by measuring the absorption / transmission of SAW and the attenuation of SAW in the presence of rotational motion of the lattice, and show the consequent generation of spin current by acoustic spin pumping.
The polar interface between LaAlO$_{3}$ and SrTiO$_{3}$ has shown promise as a field effect transistor, with reduced (nanoscale) feature sizes and potentially added functionality over conventional semiconductor systems. However, the mobility of the interfacial two-dimensional electron gas (2DEG) is lower than desirable. Therefore to progress, the highly debated origin of the 2DEG must be understood. Here we present a case for surface redox reactions as the origin of the 2DEG, in particular surface O vacancies, using a model supported by first principles calculations that describes the redox formation. In agreement with recent spectroscopic and transport measurements, we predict a stabilization of such redox processes (and hence Ti 3$d$ occupation) with film thickness beyond a critical value, which can be smaller than the critical thickness for 2D electronic conduction, since the surface defects generate trapping potentials that will affect the interface electron mobility. Several other recent experimental results, such as lack of core level broadening and shifts, find natural explanation. Pristine systems will likely require changed growth conditions or modified materials with a higher vacancy free energy.
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