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Reported values (0.2 MPa ~ 7.0 GPa) of the interlayer shear strength (ISS) of graphite are very dispersed. The main challenge to obtain a reliable value of ISS is the lack of precise experimental methods. Here we present a novel experimental approach to measure the ISS, and obtain the value as 0.14 GPa. Our result can serve as an important basis for understanding mechanical behavior of graphite or graphene-based materials.
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We computed the inter-layer bonding properties of graphite using an ab-initio many body theory. We carried out variational and diffusion quantum Monte Carlo calculations and found an equilibrium inter-layer binding energy in good agreement with most recent experiments. We also analyzed the behavior of the total energy as a function of interlayer separation at large distances comparing the results with the predictions of the random phase approximation.
We report transport measurement in zero and applied magnetic field on a single crystal of NbAs. Transverse and longitudinal magnetoresistance in the plane of this tetragonal structure does not saturate up to 9 T. In the transverse configuration ($H parallel c$, $I perp c$) it is 230,000 % at 2 K. The Hall coefficient changes sign from hole-like at room temperature to electron-like below $sim$ 150 K. The electron carrier density and mobility calculated at 2 K based on a single band approximation are 1.8 x 10$^{19}$ cm$^{-3}$ and 3.5 x 10$^{5}$ cm$^2$/Vs, respectively. These values are similar to reported values for TaAs and NbP, and further emphasize that this class of noncentrosymmetric, transition-metal monopnictides is a promising family to explore the properties of Weyl semimetals and the consequences of their novel electronic structure.
Coulomb bound electron-hole pairs, excitons, govern the optical properties of semi-conducting transition metal dichalcogenides like MoS$_2$ and WSe$_2$. We study optical transitions at the K-point for 2H homobilayer MoS$_2$ in Density Functional Theory (DFT) including excitonic effects and compare with reflectivity measurements in high quality samples encapsulated in hexagonal BN. In both calculated and measured spectra we find a strong interlayer exciton transition in energy between A and B intralayer excitons, observable for T$=4 -300$ K, whereas no such transition is observed for the monolayer in the same structure in this energy range. The interlayer excitons consist of an electron localized in one layer and a hole state delocalized over the bilayer, which results in the unusual combination of high oscillator strength and a static dipole moment. We also find signatures of interlayer excitons involving the second highest valence band (B) and compare absorption calculations for different bilayer stackings. For homotrilayer MoS$_2$ we also observe interlayer excitons and an energy splitting between different intralayer A-excitons originating from the middle and outer layers, respectively.
The polycrystalline form of the compound, Tb5Si3, crystallizing in Mn5Si3-type hexagonal structure, which was earlier believe to order antiferromagnetically below 69 K, has been recently reported by us to exhibit interesting magnetoresistance (MR) anomalies. In order to understand the magnetic anomalies of this compound better, we synthesized single crystals of this compound and subjected them to intense magnetization and MR studies. The results reveal that the magnetic behavior is strongly anisotropic as the easy axis is along a basal plane. There appear to be multiple magnetic features in the close vicinity of 70 K. In addition, there are multiple steps in isothermal magnetization (which could not be resolved in the data for polycrystalline data) for magnetic-field (H) along a basal plane. The sign of MR is positive in the magnetically ordered state, and, interestingly, the magnitude dramatically increases at the initial step for H parallel to basal plane, but decreases at subsequent steps as though the origin of these steps are different. However, for the perpendicular orientation (H || [0 0 0 1]), there is no evidence for any step either in M(H) or in MR(H). These results establish this compound is an interesting magnetic material.
The interlayer bonding in two dimensional materials is particularly important because it is not only related to their physical and chemical stability but also affects their mechanical, thermal, electronic, optical, and other properties. To address this issue, we report the direct characterization of the interlayer bonding in 2D SnSe using contact-resonance atomic force microscopy in this study. Site specific CR spectroscopy and CR force spectroscopy measurements are performed on both SnSe and its supporting SiO2 substrate comparatively. Based on the cantilever and contact mechanic models, the contact stiffness and vertical Youngs modulus are evaluated in comparison with SiO2 as a reference material. The interlayer bonding of SnSe is further analyzed in combination with the semi-analytical model and density functional theory calculations. The direct characterization of interlayer interactions using this nondestructive methodology of CR AFM would facilitate a better understanding of the physical and chemical properties of 2D layered materials, specifically for interlayer intercalation and vertical heterostructures.
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