Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userBonding mechanism in the nitrides Ti2AlN and TiN: an experimental and theoretical investigation
96
0
0.0
(
0
)
Ask ChatGPT about the research
No Arabic abstract
The electronic structure of nanolaminate Ti2AlN and TiN thin films has been investigated by bulk-sensitive soft x-ray emission spectroscopy. The measured Ti L, N K, Al L1 and Al L2,3 emission spectra are compared with calculated spectra using ab initio density-functional theory including dipole transition matrix elements. Three different types of bond regions are identified; a relatively weak Ti 3d - Al 3p bonding between -1 and -2 eV below the Fermi level, and Ti 3d - N 2p and Ti 3d - N 2s bonding which are deeper in energy observed at -4.8 eV and -15 eV below the Fermi level, respectively. A strongly modified spectral shape of 3s states of Al L2,3 emission from Ti2AlN in comparison to pure Al metal is found, which reflects the Ti 3d - Al 3p hybridization observed in the Al L1 emission. The differences between the electronic and crystal structures of Ti2AlN and TiN are discussed in relation to the intercalated Al layers of the former compound and the change of the materials properties in comparison to the isostructural carbides.
rate research
Read More
Ultraviolet-photoemission (UPS) measurements and supporting specific-heat, thermal-expansion, resistivity and magnetic-moment measurements are reported for the magnetic shape-memory alloy Ni$_2$MnGa over the temperature range $100K < T < 250K$. All measurements detect clear signatures of the premartensitic transition ($T_mathrm{PM}sim 247K$) and the martensitic transition ($T_mathrm{M} sim 196K$). Temperature-dependent UPS shows a dramatic depletion of states (pseudogap) at $T_mathrm{PM}$ located 0.3eV below the Fermi energy. First-principles electronic structure calculations show that the peak observed at 0.3eV in the UPS spectra for $T > T_mathrm{PM}$ is due to the Ni-d minority-spin electrons. Below $T_mathrm{M}$ this peak disappears, resulting in an enhanced density of states at energies around 0.8eV. This enhancement reflects Ni-d and Mn-d electronic contributions to the majority-spin density of states and is accompanied by significant reconstruction of the Fermi surface.
We report a detailed ab-initio study of the of the microscopic degradation mechanism of FIrpic, a popular blue emitter in OLED devices. We simulate the emph{operando} conditions of FIrpic by adding an electron-hole pair (exciton) to the system. We perform both static calculations with the TDDFT framework and we also simulate the evolution of the system at finite temperature via Car-Parrinello molecular dynamics. We found triplet excitons are very effective in reducing the Ir-N bond breaking barrier of the picolinate moiety. After the first bond breaking, the two oxygen of picolinate swap their position and FIrpic can either remain stable in an open configuration, or loose a picolinate fragment, which at a later stage can evolve a CO$_2$ molecule. Our method can be applied to other light emitting Ir-complexes in order to quickly estimate their stability in OLED devices. In Paper~II we complement our theoretical study with a parallel experimental investigation of the key degradation steps of FIrpic in an aged device.
Monolayer molybdenum disulphide (MoS$_2$) is a promising two-dimensional (2D) material for nanoelectronic and optoelectronic applications. The large-area growth of MoS$_2$ has been demonstrated using chemical vapor deposition (CVD) in a wide range of deposition temperatures from 600 {deg}C to 1000 {deg}C. However, a direct comparison of growth parameters and resulting material properties has not been made so far. Here, we present a systematic experimental and theoretical investigation of optical properties of monolayer MoS$_2$ grown at different temperatures. Micro-Raman and photoluminescence (PL) studies reveal observable inhomogeneities in optical properties of the as-grown single crystalline grains of MoS$_2$. Close examination of the Raman and PL features clearly indicate that growth-induced strain is the main source of distinct optical properties. We carry out density functional theory calculations to describe the interaction of growing MoS$_2$ layers with the growth substrate as the origin of strain. Our work explains the variation of band gap energies of CVD-grown monolayer MoS$_2$, extracted using PL spectroscopy, as a function of deposition temperature. The methodology has general applicability to model and predict the influence of growth conditions on strain in 2D materials.
Extraction of non-equilibrium hot carriers generated by plasmon decay in metallic nanostructures is an increasingly exciting prospect for utilizing plasmonic losses, but the search for optimum plasmonic materials with long-lived carriers is ongoing. Transition metal nitrides are an exciting class of new plasmonic materials with superior thermal and mechanical properties compared to conventional noble metals, but their suitability for plasmonic hot carrier applications remains unknown. Here, we present fully first-principles calculations of the plasmonic response, hot carrier generation and subsequent thermalization of all group IV, V and VI transition metal nitrides, fully accounting for direct and phonon-assisted transitions as well as electron-electron and electron-phonon scattering. We find the largest frequency ranges for plasmonic response in ZrN, HfN and WN, between those of gold and silver, while we predict strongest absorption in the visible spectrum for the VN, NbN and TaN. Hot carrier generation is dominated by direct transitions for most of the relevant energy range in all these nitrides, while phonon-assisted processes dominate only below 1 eV plasmon energies primarily for the group IV nitrides. Finally, we predict the maximum hot carrier lifetimes to be around 10 fs for group IV and VI nitrides, a factor of 3 - 4 smaller than noble metals, due to strong electron-phonon scattering. However, we find longer carrier lifetimes for group V nitrides, comparable to silver for NbN and TaN, while exceeding 100 fs (twice that of silver) for VN, making them promising candidates for efficient hot carrier extraction.
The electronic structure in the new transition metal carbide Ti4SiC3 has been investigated by bulk-sensitive soft x-ray emission spectroscopy and compared to the well-studied Ti3SiC2 and TiC systems. The measured high-resolution Ti L, C K and Si L x-ray emission spectra are discussed with ab initio calculations based on density-functional theory including core-to-valence dipole matrix elements. The detailed investigations of the Ti-C and Ti-Si chemical bonds provide increased understanding of the physical properties of these nanolaminates. A strongly modified spectral shape is detected for the buried Si monolayers due to Si 3p hybridization with the Ti 3d orbitals. As a result of relaxation of the crystal structure and the charge-transfer from Ti (and Si) to C, the strength of the Ti-C covalent bond is increased. The differences between the electronic and crystal structures of Ti4SiC3 and Ti3SiC2 are discussed in relation to the number of Si layers per Ti layer in the two systems and the corresponding change of materials properties.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
