No Arabic abstract
Structural, electronic and magnetic properties were calculated for the optimized $alpha$-U/W(110) thin films (TFs) within the density functional theory. Our optimization for 1U/7W(110) shows that the U-W vertical interlayer spacing (ILS) is expanded by 14.0% compared to our calculated bulk W-W ILS. Spin and orbital magnetic moments (MMs) per U atom were found to be enhanced from zero for the bulk of $alpha$-U to 1.4 $mu_B$ and -0.4 $mu_B$ at the interface of the 1U/7W(110), respectively. Inversely, our result for 3U/7W(110) TFs shows that the surface U-U ILS is contracted by 15.7% compared to our obtained bulk U-U spacing. The enhanced spin and orbital MMs in the 1U/7W(110) were then found to be suppressed in 3U/7W(110) to their ignorable bulk values. The calculated density of states (DOS) corroborates the enhancement and suppression of the MMs and shows that the total DOS, in agreement with experiment, is dominated in the vicinity of Fermi level by the 5f U states. Proximity and mismatch effects of the nonmagnetic W(110) substrate were assessed and found to be important for this system.
The Pb/Si(111) thin films were simulated within the density functional theory (DFT). The well-known Perdew-Burke-Ernzerhof (PBE) version of the generalized gradient approximation (GGA) and its recent nonempirical successor Wu-Cohen (WC) issue were used to estimate the exchange-correlation functional. Lattice parameters were calculated for Bulk of the Pb and Si compounds to obtain more reliable lattice mismatch at the interface to be consistent with our used full-potential method of calculations. The WC-GGA result predicts the lattice constants of the Pb and Si compounds better than the GGA when compared with experiment. We have found that the spin-orbit coupling (SOC) does not significantly influence the results. Our finding is in agreement with the recent observation of the Rashba-type spin-orbit splitting of quantum well states in ultrathin Pb/Si(111) films. Our result shows, in agreement with experiment, that the top site (T1) is the most stable phase. A combination of tight $sigma$ and feeble $pi$ bonds has been found at the interface, which results in a covalent Pb-Si bond. Our calculated electric field gradient (EFG) predicts quantum size effects (QSE) with respect to the number of deposited Pb layers on the Si substrate. The QSE prediction shows that the EFG dramatically drops on going from first to second layer. The EFG calculation shows that this system is not an ideal paradigm to freestanding films.
Structures and electronic properties of rhombohedral [111] and [110] bismuth nanowires are calculated with the use of density functional theory. The formation of an energy band gap from quantum confinement is studied and to improve estimates for the band gap the GW approximation is applied. The [111] oriented nanowires require surface bonds to be chemically saturated to avoid formation of metallic surface states whereas the surface of the [110] nanowires do not support metallic surface states. It is found that the onset of quantum confinement in the surface passivated [111] nanowires occurs at larger critical dimensions than for the [110] nanowires. For the [111] oriented nanowires it is predicted that a band gap of approximately 0.5 eV can be formed at a diameter of approximately 6 nm, whereas for the [110] oriented nanowires a diameter of approximately 3 nm is required to achieve a similar band gap energy. The GW correction is also applied to estimates of the electron affinity, ionisation potentials and work functions for both orientations of the nanowires for various diameters below 5 nm. The magnitude of the energy band gaps that arise in bismuth at critical dimensions of a few nanometers are of the same order as for conventional bulk semiconductors.
We perform first principles simulations for the structural, elastic and electronic properties of orthorhombic samarium orthoferrite $SmFeO_3$ within the framework of density functional theory. A number of different density functionals, such as local density approximation, generalized gradient approximation, Hubbard interaction modified functional, modified Becke$-$Johnson approximation and Heyd$-$Scuseria$-$Ernzerhof hybrid functional have been used to model the exact electron exchange-correlation. We estimate the energy of the ground state for different magnetic configurations of $SmFeO_3$. The crystal structure of $SmFeO_3$ is characterized in terms of the lattice parameters, atomic positions, relevant ionic radii, bond lengths and bond angles. The stability of the $SmFeO_3$ orthorhombic structure is simulated in terms of its elastic properties. For the electronic structure simulations, we provide estimates based on density functionals with varying degrees of computational complexities in the Jacobs ladder.
The electronic and magnetic properties of transition metal dichalcogenides are known to be extremely sensitive to their structure. In this paper we study the effect of structure on the electronic and magnetic properties of mono- and bilayer $VSe_2$ films grown using molecular beam epitaxy. $VSe_2$ has recently attracted much attention due to reports of emergent ferromagnetism in the 2D limit. To understand this important compound, high quality 1T and distorted 1T films were grown at temperatures of 200 $^text{o}$C and 450 $^text{o}$C respectively and studied using 4K Scanning Tunneling Microscopy/Spectroscopy. The measured density of states and the charge density wave (CDW) patterns were compared to band structure and phonon dispersion calculations. Films in the 1T phase reveal different CDW patterns in the first layer compared to the second. Interestingly, we find the second layer of the 1T-film shows a CDW pattern with 4a $times$ 4a periodicity which is the 2D version of the bulk CDW observed in this compound. Our phonon dispersion calculations confirm the presence of a soft phonon at the correct wavevector that leads to this CDW. In contrast, the first layer of distorted 1T phase films shows a strong stripe feature with varying periodicities, while the second layer displays no observable CDW pattern. Finally, we find that the monolayer 1T $VSe_2$ film is weakly ferromagnetic, with ~ $3.5 {mu}_B$ per unit similar to previous reports.
Using large-scale DFT calculations, we have investigated the structural and electronic properties of both armchair and zigzag graphdiyne nanotubes as a function of size. To provide insight in these properties, we present new detailed calculations of the structural relaxation energy, effective electron/hole mass, and size-scaling of the bandgap as a function of size and chirality using accurate screened-exchange DFT calculations. These calculations provide a systematic evaluation of the structural and electronic properties of the largest graphdiyne nanotubes to date - up to 1,296 atoms and 23,328 basis functions. Our calculations find that zigzag graphdiyne nanotubes (GDNTs) are structurally more stable compared to armchair GDNTs of the same size. Furthermore, these large-scale calculations allow us to present simple analytical formulae to guide future experimental efforts for estimating the fundamental bandgaps of these unique nanotubes as a function of chirality and diameter. While the bandgaps for both the armchair and zigzag GDNTs can be tuned as a function of size, the conductivity in each of these two different chiralities is markedly different. Zigzag GDNTs have wider valence and conduction bands and are expected to have a higher electron- and hole-mobility than their armchair counterparts.