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Register a new userHopping magneto-transport via nonzero orbital momentum states and organic magnetoresistance
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In hopping magnetoresistance of doped insulators, an applied magnetic field shrinks the electron (hole) s-wave function of a donor or an acceptor and this reduces the overlap between hopping sites resulting in the positive magnetoresistance quadratic in a weak magnetic field, B. We extend the theory of hopping magnetoresistance to states with nonzero orbital momenta. Different from s-states, a weak magnetic field expands the electron (hole) wave functions with positive magnetic quantum numbers, m > 0, and shrinks the states with negative m in a wide region outside the point defect. This together with a magnetic-field dependence of injection/ionization rates results in a negative weak-field magnetoresistance, which is linear in B when the orbital degeneracy is lifted. The theory provides a possible explanation of a large low-field magnetoresistance in disordered pi-conjugated organic materials (OMAR).
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Highly-anisotropic in-plane magneto-resistance (MR) in graphite (HOPG) samples has been recently observed (Y. Kopelevich et al., arXiv:1202.5642) which is negative and linear in low fields in some current direction while it is giant, super-linear and positive in the perpendicular direction. In the framework of the hopping conductance theory via non-zero angular momentum orbitals we link extraordinary MRs in graphite and in organic insulators (OMAR) observed in about the same magnetic fields. The theory predicts quadratic negative MR (NMR) when there is a time-reversal symmetry (TRS), and linear NMR if TRS is broken. We argue that the observed linear NMR could be a unique signature of the broken TRS both in graphite and organic compounds. While some local paramagnetic centers are responsible for the broken TRS in organic insulators, a large diamagnetism of our HOPG samples may involve a more intriguing scenario of TRS breaking.
Charge transport in disordered organic semiconductors occurs by hopping of charge carriers between localized sites that are randomly distributed in a strongly energy dependent density of states. Extracting disorder and hopping parameters from experimental data like temperature dependent current-voltage characteristics typically relies on parametrized mobility functionals that are integrated in a drift-diffusion solver. Surprisingly, the functional based on the extended Gaussian disorder model (eGDM) has been extremely successful at this, despite it being based on the assumption of nearest neighbor hopping (nnH) on a regular lattice. We here propose a variable range hopping (VRH) model that has been integrated in a freeware drift-diffusion solver. The mobility model has been calibrated using kinetic Monte Carlo calculations and shows good agreement with the Monte Carlo calculations over the experimentally relevant part of the parameter space. The model is applied to temperature-dependent space charge limited current (SCLC) measurements of different systems. In contrast to the eGDM, the VRH model provides a consistent description of both p-type and n-type devices. We find a critical ratio of aNN/$alpha$ (mean inter-site distance / localization radius) of ~3 below which hopping to non-nearest neighbors becomes important around room temperature and the eGDM cannot be used for parameter extraction. Typical (Gaussian) disorder values in the range 45-120 meV are found, without any clear correlation with photovoltaic performance when the same active layer is used in an organic solar cell.
Using analytical arguments and computer simulations we show that the dependence of the hopping carrier mobility on the electric field $mu(F)/mu(0)$ in a system of random sites is determined by the localization length $a$, and not by the concentration of sites $N$. This result is in drastic contrast to what is usually assumed in the literature for a theoretical description of experimental data and for device modeling, where $N^{-1/3}$ is considered as the decisive length scale for $mu(F)$. We show that although the limiting value $mu(F rightarrow 0)$ is determined by the ratio $N^{-1/3}/a$, the dependence $mu(F)/mu(0)$ is sensitive to the magnitude of $a$, and not to $N^{-1/3}$. Furthermore, our numerical and analytical results prove that the effective temperature responsible for the combined effect of the electric field $F$ and the real temperature $T$ on the hopping transport via spatially random sites can contain the electric field only in the combination $eFa$.
Light beams carrying orbital-angular-momentum (OAM) play an important role in optical manipulation and communication owing to their unbounded state space. However, it is still challenging to efficiently discriminate OAM modes with large topological charges and thus only a small part of the OAM states have been usually used. Here we demonstrate that neural networks can be trained to sort OAM modes with large topological charges and unknown superpositions. Using intensity images of OAM modes generalized in simulations and experiments as the input data, we illustrate that our neural network has great generalization power to recognize OAM modes of large topological charges beyond training areas with high accuracy. Moreover, the trained neural network can correctly classify and predict arbitrary superpositions of two OAM modes with random topological charges. Our machine learning approach only requires a small portion of experimental samples and significantly reduces the cost in experiments, which paves the way to study the OAM physics and increase the state space of OAM beams in practical applications.
In organic light emitting diodes with small area the current may be dominated by a finite number, N of sites in which the electron-hole recombination occurs. As a result, averaging over the hyperfine magnetic fields, b_h, that are generated in these sites by the environment nuclei is incomplete. This creates a random (mesoscopic) current component, {Delta}I(B), at field B having relative magnitude ~ N^(-1/2). To quantify the statistical properties of {Delta}I(B) we calculate the correlator K(B, {Delta}B)= <{delta}I(B - {Delta}B/2){delta}I(B + {Delta}B/2)> for parallel and perpendicular orientations of {Delta}B. We demonstrate that mesoscopic fluctuations develop at fields B>>b_h, where the average magnetoresistance is near saturation. These fluctuations originate from the slow beating between S and T_0 states of the recombining e-h spin pair-partners. We identify the most relevant processes responsible for the current fluctuations as due to anomalously slow beatings that develop in sparse e-h polaron pairs at sites for which the b_h projections on the external field direction almost coincide.
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