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Localization and Mobility Gap in Topological Anderson Insulator

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 Added by Yanyang Zhang Dr.
 Publication date 2011
  fields Physics
and research's language is English




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It has been proposed that disorder may lead to a new type of topological insulator, called topological Anderson insulator (TAI). Here we examine the physical origin of this phenomenon. We calculate the topological invariants and density of states of disordered model in a super-cell of 2-dimensional HgTe/CdTe quantum well. The topologically non-trivial phase is triggered by a band touching as the disorder strength increases. The TAI is protected by a mobility gap, in contrast to the band gap in conventional quantum spin Hall systems. The mobility gap in the TAI consists of a cluster of non-trivial subgaps separated by almost flat and localized bands.



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The understanding of disordered quantum systems is still far from being complete, despite many decades of research on a variety of physical systems. In this review we discuss how Bose-Einstein condensates of ultracold atoms in disordered potentials have opened a new window for studying fundamental phenomena related to disorder. In particular, we point our attention to recent experimental studies on Anderson localization and on the interplay of disorder and weak interactions. These realize a very promising starting point for a deeper understanding of the complex behaviour of interacting, disordered systems.
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