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Register a new userProximal magnetometry of monolayers of magnetic moments
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We present a method to measure the magnetic properties of monolayers and ultra-thin films of magnetic material. The method is based on low energy muon spin rotation and $beta$-detected nuclear magnetic resonance measurements. A spin probe is used as a proximal magnetometer by implanting it in the substrate, just below the magnetic material. We calculate the expected magnetic field distribution sensed by the probe and discuss its temperature and implantation depth dependencies. This method is highly suitable for measuring the magnetic properties of monolayers of single molecule magnets, but can also be extended to ultra-thin magnetic films.
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The magnetic properties of a monolayer of Fe4 single molecule magnets grafted onto a Au (111) thin film have been investigated using low energy muon spin rotation. The properties of the monolayer are compared to bulk Fe4. We find that the magnetic properties in the monolayer are consistent with those measured in the bulk, strongly indicating that the single molecule magnet nature of Fe4 is preserved in a monolayer. However, differences in the temperature dependencies point to a small difference in their energy scale. We attribute this to a ~60% increase in the intramolecular magnetic interactions in the monolayer.
Effects of annealing on chemical vapor deposited graphene are investigated via a weak localization magnetoresistance measurement. Annealing at SI{300}{celsius} in inert gases, a common cleaning procedure for graphene devices, is found to raise the dephasing rate significantly above the rate from electron-electron interactions, which would otherwise be expected to dominate dephasing at 4 K and below. This extra dephasing is apparently induced by local magnetic moments activated by the annealing process, and depends strongly on the backgate voltage applied.
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We survey the state-of-the-art knowledge of ferroelectric and ferroelastic group-IV monochalcogenide monolayers. These semiconductors feature remarkable structural and mechanical properties, such as a switchable in-plane spontaneous polarization, soft elastic constants, structural degeneracies, and thermally-driven two-dimensional structural transformations. Additionally, these 2D materials also display selective valley excitations, valley Hall effects, and persistent spin helix behavior. After a description of their Raman spectra, a discussion of optical properties arising from their lack of centrosymmetry---such as an unusually strong second-harmonic intensity, large bulk photovoltaic effects, photostriction, and tunable exciton binding energies---is provided as well. The physical properties observed in these materials originate from (correlate with) their intrinsic and switchable electric polarization, and the physical behavior hereby reviewed could be of use in non-volatile memory, valleytronic, spintronic, and optoelectronic devices: these 2D multiferroics enrich and diversify the 2D materials toolbox.
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