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Register a new userLarge tuneable Rashba spin splitting of a two-dimensional electron gas in Bi2Se3
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We report a Rashba spin splitting of a two-dimensional electron gas in the topological insulator Bi$_2$Se$_3$ from angle-resolved photoemission spectroscopy. We further demonstrate its electrostatic control, and show that spin splittings can be achieved which are at least an order-of-magnitude larger than in other semiconductors. Together these results show promise for the miniaturization of spintronic devices to the nanoscale and their operation at room temperature.
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Three-particle complexes consisting of two holes in the completely filled zero electron Landau level and an excited electron in the unoccupied first Landau level are investigated in a quantum Hall insulator. The distinctive features of these three-particle complexes are an electron-hole mass symmetry and the small energy gap of the quantum Hall insulator itself. Theoretical calculations of the trion energy spectrum in a quantizing magnetic field predict that, besides the ground state, trions feature a hierarchy of excited bound states. In agreement with the theoretical simulations, we observe new photoluminescence lines related to the excited trion states. A relatively small energy gap allows the binding of three-particle complexes with magnetoplasma oscillations and formation of plasmarons. The plasmaron properties are investigated experimentally.
The transport properties of a magnetic two dimensional electron gas consisting of a modulation doped n type HgMnTe/HgCdTe quantum well, QW, have been investigated. By analyzing the Shubnikov-de Haas oscillations and the node positions of their beating patterns, we have been able to separate the gate voltage dependent Rashba spin-orbit splitting from the temperature dependent giant Zeeman splitting. It has been experimentally demonstrated that the Rashba spin-orbit splitting is larger than or comparable to the $sp-d$ exchange interaction induced giant Zeeman splitting in this magnetic 2DEG even at moderately high magnetic fields.
Negative longitudinal magnetoresistance (NLMR) has been reported in a variety of materials and has attracted extensive attention as an electrotransport hallmark of topological Weyl semimetals. However, its origin is still under debate. Here, we demonstrate that the NLMR in a two dimensional electron gas can be influenced by the measurement current. While the NLMR persists up to 130 K, its magnitude and magnetic field response become dependent on the applied current below 60 K. The tunable NLMR at low and high currents can be best attributed to quantum interference and disorder scattering effects, respectively. This work uncovers non-Ohmic NLMR in a non-Weyl material and highlights potential effects of the measurement current in elucidating electrotransport phenomena. We also demonstrate that NLMRs can be a valuable phenomenon in revealing the origins of other properties, such as negative MRs in perpendicular magnetic fields.
Optical excitations of BiTeI with large Rashba spin splitting have been studied in an external magnetic field ($B$) applied parallel to the polar axis. A sequence of transitions between the Landau levels (LLs), whose energies are in proportion to $sqrt{B}$ were observed, being characteristic of massless Dirac electrons. The large separation energy between the LLs makes it possible to detect the strongest cyclotron resonance even at room temperature in moderate fields. Unlike in 2D Dirac systems, the magnetic field induced rearrangement of the conductivity spectrum is directly observed.
Strong Rashba effects at surfaces and interfaces have attracted great attention for basic scientific exploration and practical applications. Here, the first-principles investigation shows that giant and tunable Rashba effects can be achieved in KTaO$_3$ (KTO) ultrathin films by applying biaxial stress. When increasing the in-plane compressive strain nearly to -5%, the Rashba spin splitting energy reaches $E_{R}=140$ meV, approximately corresponding to the Rashba coupling constant $alpha_{R}=1.3$ eV {AA}. We investigate its strain-dependent crystal structures, energy bands, and related properties, and thereby elucidate the mechanism for the giant Rashba effects. Furthermore, we show that giant Rashba spin splitting can be kept in the presence of SrTiO$_3$ capping layer and/or Si substrate, and strong circular photogalvanic effect can be achieved to generate spin-polarized currents in the KTO thin films or related heterostructures, which are promising for future spintronic and optoelectronic applications.
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