Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userSignatures of an Anomalous Nernst Effect in a Mesoscopic Two-Dimensional Electron System
142
0
0.0
(
0
)
Ask ChatGPT about the research
No Arabic abstract
We investigate the Nernst effect in a mesoscopic two-dimensional electron system (2DES) at low magnetic fields, before the onset of Landau level quantization. The overall magnitude of the Nernst signal agrees well with semi-classical predictions. We observe reproducible mesoscopic fluctuations in the signal which diminish significantly with an increase in temperature. We also show that the Nernst effect exhibits an anomalous component which is correlated with an oscillatory Hall effect. This behavior may be able to distinguish between different spin-correlated states in the 2DES.
rate research
Read More
We study the Nernst effect and the spin Nernst effect, that a longitudinal thermal gradient induces a transverse voltage and a spin current. A mesoscopic four-terminal cross-bar device having the Rashba spin-orbit interaction (SOI) under a perpendicular magnetic field is considered. For zero SOI, the Nernst coefficient peaks when the Fermi level crosses the Landau Levels. In the presence of the SOI, the Nernst peaks split, and the spin Nernst effect appears and exhibits a series of oscillatory structures. The larger SOI is or the weaker magnetic field is, the more pronounced the spin Nernst effect is. The results also show that the Nernst and spin Nernst coefficients are sensitive to the detailed characteristics of the sample and the contacts. In addition, the Nernst effect is found to survive in strong disorder than the spin Nernst effect does.
Nanoelectronic devices embedded in the two-dimensional electron system (2DES) of a GaAs/AlGaAs heterostructure enable a large variety of applications from fundamental research to high speed transistors. Electrical circuits are thereby commonly defined by creating barriers for carriers by selective depletion of a pre-existing 2DES. Here we explore an alternative approach: we deplete the 2DES globally by applying a negative voltage to a global top gate and screen the electric field of the top gate only locally using nanoscale gates placed on the wafer surface between the plane of the 2DES and the top gate. Free carriers are located beneath the screen gates and their properties can be controlled by means of geometry and applied voltages. This method promises considerable advantages for the definition of complex circuits by the electric field effect as it allows to reduce the number of gates and simplify gate geometries. Examples are carrier systems with ring topology or large arrays of quantum dots. Here, we present a first exploration of this method pursuing field effect, Hall effect and Aharonov-Bohm measurements to study electrostatic, dynamic and coherent properties.
We study the coupled dynamics of spin and charge currents in a two-dimensional electron gas in the transport diffusive regime. For systems with inversion symmetry there are established relations between the spin Hall effect, the anomalous Hall effect and the inverse spin Hall effect. However, in two-dimensional electron gases of semiconductors like GaAs, inversion symmetry is broken so that the standard arguments do not apply. We demonstrate that in the presence of a Rashba type of spin-orbit coupling (broken structural inversion symmetry) the anomalous Hall effect, the spin Hall and inverse spin Hall effect are substantially different effects. Furthermore we discuss the inverse spin Hall effect for a two-dimensional electron gas with Rashba and Dresselhaus spin-orbit coupling; our results agree with a recent experiment.
The spin Nernst effect describes a transverse spin current induced by the longitudinal thermal gradient in a system with the spin-orbit coupling. Here we study the spin Nernst effect in a mesoscopic four-terminal cross-bar Weyl semimetal device under a perpendicular magnetic field. By using the tight-binding Hamiltonian combining with the nonequilibrium Greens function method, the three elements of the spin current in the transverse leads and then spin Nernst coefficients are obtained. The results show that the spin Nernst effect in the Weyl semimetal has the essential difference with the traditional one: The z direction spin currents is zero without the magnetic field while it appears under the magnetic field, and the x and y direction spin currents in the two transverse leads flows out or flows in together, in contrary to the traditional spin Nernst effect, in which the spin current is induced by the spin-orbit coupling and flows out from one lead and flows in on the other. So we call it the anomalous spin Nernst effect. In addition, we show that the Weyl semimetals have the center-reversal-type symmetry, the mirror-reversal-type symmetry and the electron-hole-type symmetry, which lead to the spin Nernst coefficients being odd function or even function of the Fermi energy, the magnetic field and the transverse terminals. Moreover, the spin Nernst effect in the Weyl semimetals are strongly anisotropic and its coefficients are strongly dependent on both the direction of thermal gradient and the direction of the transverse lead connection. Three non-equivalent connection modes (x-z, z-x and x-y modes) are studied in detail, and the spin Nernst coefficients for three different modes exhibit very different behaviors. These strongly anisotropic behaviors of the spin Nernst effect can be used as the characterization of magnetic Weyl semimetals.
Dirac and Weyl semimetals display a host of novel properties. In Cd$_3$As$_2$, the Dirac nodes lead to a protection mechanism that strongly suppresses backscattering in zero magnetic field, resulting in ultrahigh mobility ($sim$ 10$^7$ cm$^2$ V$^{-1}$ s$^{-1}$). In applied magnetic field, an anomalous Nernst effect is predicted to arise from the Berry curvature associated with the Weyl nodes. We report observation of a large anomalous Nernst effect in Cd$_3$As$_2$. Both the anomalous Nernst signal and transport relaxation time $tau_{tr}$ begin to increase rapidly at $sim$ 50 K. This suggests a close relation between the protection mechanism and the anomalous Nernst effect. In a field, the quantum oscillations of bulk states display a beating effect, suggesting that the Dirac nodes split into Weyl states, allowing the Berry curvature to be observed as an anomalous Nernst effect.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
