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Register a new userInductance measurement of YBCO strip-lines made by ion irradiation
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We have investigated the electrodynamic properties of High-Tc strip-lines made by ion irradiation, in order to evaluate the potentialities of such a technology for RSFQ superconductor digital electronic. SQUID loops of different length and width have been fabricated by ion bombardment of 70 nm thick films through e-beam lithographied shadow masks, and measured at different temperatures. The voltage modulations have been recorded by direct injection of a control current in the SQUIDs arms. The corresponding line inductances have been measured and compared with 3D simulations. A quantitative agreement has been obtained leading to typical values of 0.4 pH/microns without ground plane.
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Superconducting Quantum Interference Filters (SQIFs) are arrays of superconducting loops of different sizes including Josephson Junctions (JJ). For a random distribution of sizes, they present a non-periodic response to an applied magnetic field, with an extended linear regime and a sizable field sensitivity. Such properties make SQIFs interesting devices to detect the magnetic component of electromagnetic waves at microwave frequencies. We have used the highly scalable technique of ion irradiation to make High Tc SQUIDs and SQIFs based on commercial YBa2Cu3O7 films, and studied their properties. Both display optimum performances as a function of temperature and bias current, that can be understood in the frame of numerical simulations that we developed. The role of asymmetries and spread in JJ characteristics (routinely found in HTSc technologies) is described : ion irradiation based devices appear robust against them. We finally present results on SQIF made with 2000 SQUID in series, showing a transfer function dV/dB ~ 1000V/T .
Reproducible High Tc Josephson junctions have been made in a rather simple two-step process using ion irradiation. A microbridge 1 to 5 micrometers wide is firstly designed by ion irradiating a c-axis-oriented YBa2Cu3O7 film through a gold mask such as the unprotected part becomes insulating. A lower Tc part is then defined within the bridge by irradiating with a much lower dose through a 20 nm wide narrow slit opened in a standard electronic photoresist. These planar junctions, whose settings can be finely tuned, exhibit reproducible and nearly ideal Josephson characteristics. Non hysteretic Resistively Shunted Junction (RSJ) like behavior is observed, together with sinc Fraunhofer patterns for rectangular junctions. The IcRn product varies with temperature ; it can reach a few mV. The typical resistance ranges from 0.1 to a few ohms, and the critical current density can be as high as 30 kA/cm2. The dispersion in characteristics is very low, in the 5% to 10% range. Such nanojunctions have been used to make microSQUIDs (Superconducting Quantum Interference Device) operating at Liquid Nitrogen (LN2) temperature. They exhibit a very small asymmetry, a good sensitivity and a rather low noise. The process is easily scalable to make rather complex Josephson circuits.
Superconductor-Ferromagnet-Superconductor (S-F-S) Josephson junctions were fabricated by making a narrow cut through a S-F double layer using direct writing by Focused Ion Beam (FIB). Due to a high resolution (spot size smaller than 10 nm) of FIB, junctions with a small separation between superconducting electrodes ($leq$ 30 nm) can be made. Such a short distance is sufficient for achieving a considerable proximity coupling through a diluted CuNi ferromagnet. We have successfully fabricated and studied S-F-S (Nb-CuNi-Nb) and S-S-S (Nb-Nb/CuNi-Nb) junctions. Junctions exhibit clear Fraunhofer modulation of the critical current as a function of magnetic field, indicating good uniformity of the cut. By changing the depth of the cut, junctions with the $I_c R_n$ product ranging from 0.5 mV to $sim 1mu $V were fabricated.
Irradiation with electrons is an efficient approach to inducing a large number of defects with a minimal impact on the material itself. Analysis of the energy transfer from an accelerated particle smashing into the crystal lattice shows that only electrons with MeV energies produce point defects in the form of interstitial ions and vacancies that form perfect scattering centers. Here, we investigate the changes in the resistive characteristics of YBCO single crystals from the 1-2-3 system after several steps of low-temperature irradiation with $0.5-2.5$,MeV electrons and irradiation doses of up to $8.8times10^{18}$,cm$^{-2}$. The penetration depth of such electrons is much larger than the crystal thickness. We reveal that defects appearing in consequence of such electron irradiation not only increase the residual resistance, but they affect the phonon spectrum of the system and lower the superconducting transition temperature linearly with increase of the irradiation dose. Furthermore, the irradiation-induced defects are distributed non-uniformly, that manifests itself via a broadening of the superconducting transition. Interestingly, the excess conductivity remains almost unaffected after such electron irradiation.
We report temperature dependent Andreev reflection measurements of Co/ Y$_{1}$Ba$_{2}$Cu$_{3}$O$_{7-delta}$ (YBCO) heterostructure samples with junction areas of 1 $mu$m diameter. Modelling of the 5-70 K conductivity data according to a modified Blonder-Tinkham-Klapwijk theory yields a spin polarization in Co film amounting to 34% which is almost constant up to 70 K. The YBCO films have been grown by pulsed laser deposition on sapphire substrates. The Co films are deposited by thermal evaporation on YBCO. The film is characterized by powder X-ray diffraction measurements which shows YBCO is grown in (001) direction.The critical current density, 5 x 10$^{6}$ A/cm$^{2}$, in YBCO remains nearly constant after deposition of Co at zero field and 77 K.
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