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Register a new userLoss Dependence on Geometry and Applied Power in Superconducting Coplanar Resonators
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The loss in superconducting microwave resonators at low-photon number and low temperatures is not well understood but has implications for achievable coherence times in superconducting qubits. We have fabricated single-layer resonators with a high quality factor by patterning a superconducting aluminum film on a sapphire substrate. Four resonator geometries were studied with resonant frequencies ranging from 5 to 7 GHz: a quasi-lumped element resonator, a coplanar strip waveguide resonator, and two hybrid designs that contain both a coplanar strip and a quasi-lumped element. Transmitted power measurements were taken at 30 mK as a function of frequency and probe power. We find that the resonator loss, expressed as the inverse of the internal quality factor, decreases slowly over four decades of photon number in a manner not merely explained by loss from a conventional uniform spatial distribution of two-level systems in an oxide layer on the superconducting surfaces of the resonator.
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Thin films of TiN were sputter-deposited onto Si and sapphire wafers with and without SiN buffer layers. The films were fabricated into RF coplanar waveguide resonators, and internal quality factor measurements were taken at millikelvin temperatures in both the many photon and single photon limits, i.e. high and low power regimes, respectively. At high power, internal quality factors ($Q_i$s) higher than $10^7$ were measured for TiN with predominantly a (200)-TiN orientation. Films that showed significant (111)-TiN texture invariably had much lower $Q_i$s, on the order of $10^5$. Our studies show that the (200)-TiN is favored for growth at high temperature on either bare Si or SiN buffer layers. However, growth on bare sapphire or Si(100) at low temperature resulted in primarily a (111)-TiN orientation. Ellipsometry and Auger measurements indicate that the (200)-TiN growth on the bare Si substrates is correlated with the formation of a thin, $approx 2$ nm, layer of SiN during the pre-deposition procedure. In the single photon regime, $Q_i$ of these films exceeded $8times10^5$, while thicker SiN buffer layers led to reduced $Q_i$s at low power.
We report on the design, fabrication and characterization of superconducting coplanar waveguide resonators with nanoscopic constrictions. By reducing the size of the center line down to 50 nm, the radio frequency currents are concentrated and the magnetic field in its vicinity is increased. The device characteristics are only slightly modified by the constrictions, with changes in resonance frequency lower than 1% and internal quality factors of the same order of magnitude as the original ones. These devices could enable the achievement of higher couplings to small magnetic samples or even to single molecular spins and have applications in circuit quantum electrodynamics, quantum computing and electron paramagnetic resonance.
Dielectric measurements on insulating materials at cryogenic temperatures can be challenging, depending on the frequency and temperature ranges of interest. We present a technique to study the dielectric properties of bulk dielectrics at GHz frequencies. A superconducting coplanar Nb resonator is deposited directly on the material of interest, and this resonator is then probed in distant-flip-chip geometry with a microwave feedline on a separate chip. Evaluating several harmonics of the resonator gives access to various probing frequencies, in the present studies up to 20 GHz. We demonstrate the technique on three different materials (MgO, LaAlO3, and TiO2), at temperatures between 1.4 K and 7 K.
Losses in superconducting planar resonators are presently assumed to predominantly arise from surface-oxide dissipation, due to experimental losses varying with choice of materials. We model and simulate the magnitude of the loss from interface surfaces in the resonator, and investigate the dependence on power, resonator geometry, and dimensions. Surprisingly, the dominant surface loss is found to arise from the metal-substrate and substrate-air interfaces. This result will be useful in guiding device optimization, even with conventional materials.
We have measured noise in thin-film superconducting coplanar waveguide resonators. This noise appears entirely as phase noise, equivalent to a jitter of the resonance frequency. In contrast, amplitude fluctuations are not observed at the sensitivity of our measurement. The ratio between the noise power in the phase and amplitude directions is large, in excess of 30 dB. These results have important implications for resonant readouts of various devices such as detectors, amplifiers, and qubits. We suggest that the phase noise is due to two-level systems in dielectric materials.
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