We investigate the possible frictionless transport of many composite (condensed) fermions at room temperature regime along an annular tube with transversely wavy-corrugations by using the verified transition-rate model and boundary perturbation approach. We found that for certain activation volume and energy there exist possible frictionless states at room temperature regime.
The almost frictionless transport of the very-high temperature amorphous matter which resembles the color glass condensate (possibly having much of their origin in the RHIC heavy ion collisions) in a confined annular tube with transversely corrugations is investigated by using the verified transition-rate model and boundary perturbation method. We found that for certain activation volume and energy there exist possible frictionless states which might be associated with the perfect fluid formation during the early expansion stage in RHIC Au+Au collisions. We also address the possible similar scenario in LHC Pb+Pb collisions considering the possible perfect fluid formation in ultra-high temperature transport of amorphous matter.
The gravity-driven flow along an annular topological defect (string) with transversely corrugations is investigated by using the verified transition-rate model and boundary perturbation method. We found that for certain activation volume and energy there exists possible frictionless states which might be associated with the missing momentum of inertia or dark matter.
An optical quantum memory is a stationary device that is capable of storing and recreating photonic qubits with a higher fidelity than any classical device. Thus far, these two requirements have been fulfilled in systems based on cold atoms and cryogenically cooled crystals. Here, we report a room-temperature quantum memory capable of storing arbitrary polarization qubits with a signal-to-background ratio higher than 1 and an average fidelity clearly surpassing the classical limit for weak laser pulses containing 1.6 photons on average. Our results prove that a common vapor cell can reach the low background noise levels necessary for quantum memory operation, and propels atomic-vapor systems to a level of quantum functionality akin to other quantum information processing architectures.
VO$_{2}$ is a model material system which exhibits a metal to insulator transition at 67$^circ$C. This holds potential for future ultrafast switching in memory devices, but typically requires a purely electronic process to avoid the slow lattice response. The role of lattice vibrations is thus important, but it is not well understood and it has been a long-standing source of controversy. We use a combination of ultrafast spectroscopy and ab initio quantum calculations to unveil the mechanism responsible for the transition. We identify an atypical Peierls vibrational mode which acts as a trigger for the transition. This rules out the long standing paradigm of a purely electronic Mott transition in VO$_{2}$; however, we found a new electron-phonon pathway for a purely reversible electronic transition in a true bi-stable fashion under specific conditions. This transition is very atypical, as it involves purely charge-like excitations and requires only small nuclear displacement. Our findings will prompt the design of future ultrafast electro-resistive non-volatile memory devices.
Electric field-controlled, two-dimensional (2D) exciton dynamics in transition metal dichalcogenide monolayers is a current research focus in condensed matter physics. We have experimentally investigated the spectral and temporal properties of the A-exciton in a molybdenum diselenide (MoSe2) monolayer under controlled variation of a vertical, electric dc field at room temperature. By using steady-state and time-resolved photoluminescence spectroscopies, we have observed dc field-induced spectral shifts and linewidth broadenings that are consistent with the shortening of the excitons non-radiative lifetime due to field-induced dissociation. We discuss the implications of the results for future developments in nanoscale metrology and exploratory, optoelectronics technologies based on layered, 2D semiconductors.