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Effect of hole doping on the London penetration depth of Bi:2212 and Bi(Y):2212

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 Added by John Robert Cooper
 Publication date 2009
  fields Physics
and research's language is English




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We report measurements of AC susceptibility and hence the in-plane London penetration depth on the same samples of Bi:2212 and Bi(Y):2212 for many values of the planar hole concentration/CuO2 unit (p). These support the scenario in which the pseudogap weakens the superconducting response only for p less than approximately 0.19.



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We report the pressure effect in Bi2Sr2Ca2Cu3O10+{delta} (Bi-2223) single crystal with a small amount of intergrowth of Bi2Sr2CaCu2O8+{delta} (Bi-2212). Their superconducting transition temperatures Tcs showed a domelike shape as a function of pressure, which showed a good agreement with the general relation between the carrier concentration and Tc. Our experimental results indicate that high pressure can induce effective carrier doping into the multilayered high-Tc cuprate superconductor
We report on transport measurements in a Bi-2212 single crystal with columnar defects parallel to the c-axis. The tilt of the magnetic field away from the direction of the tracks is studied for filling factors f=B_z/B_phi<1. Near the Bose Glass transition temperature T_BG, the angular scaling laws are verified and we find the field independent critical exponents nu=1.1 and z=5.30. Finally, above H_perpC we evidence the signature of a smectic-A like vortex phase. These experimental results provide support for the Bose Glass theory.
171 - Matthias Opel 1999
We present results of Raman scattering experiments in differently doped Bi-2212 single crystals. Below Tc the spectra show pair-breaking features in the whole doping range. The low frequency power laws confirm the existence of a $d_{x^2-y^2}$-wave order parameter. In the normal state between Tc and T* = 200K we find evidence for a pseudogap in B2g symmetry. Upon doping its effect on the spectra decreases while its energy scale appears to be unchanged.
The improved resolution of laser-based angle-resolved photoemission spectroscopy (ARPES) allows reliable access to fine structures in the spectrum. We present a systematic, doping-dependent study of a recently discovered low-energy kink in the nodal dispersion of Bi2Sr2CaCu2O8+d (Bi-2212), which demonstrates the ubiquity and robustness of this kink in underdoped Bi-2212. The renormalization of the nodal velocity due to this kink becomes stronger with underdoping, revealing that the nodal Fermi velocity is non-universal, in contrast to assumed phenomenology. This is used together with laser-ARPES measurements of the gap velocity, v2, to resolve discrepancies with thermal conductivity measurements.
We scrutinize the enhanced superconducting performance of melt quench Bismuth based Bi2Sr2CaCu2O8 (Bi-2212) superconductor. The superconducting properties of melt quenched Bi-2212 (Bi2212-MQ) sample are compared with non-melted Bi2212-NM and Bi1.4Pb0.6Sr2Ca2Cu3O10 (Bi-2223). Crystal structure and morphology of the samples are studied using X-ray diffraction and Scanning Electron Microscopy (SEM) techniques. The high field (14T) magneto-transport and DC/AC magnetic susceptibility techniques are extensively used to study the superconducting properties of the investigated samples. The superconducting critical temperature (Tc) and upper critical field (Hc2) as well as thermally activated flux flow (TAFF) activation energy are estimated from the magneto-resistive [R(T)H] measurements. Both DC magnetization and amplitude dependent AC susceptibility measurements are used to determine the field and temperature dependence of critical current density (Jc) for studied samples. On the other hand, the frequency dependent AC susceptibility is used for estimating flux creep activation energy. It is found that melt quenching significantly enhances the superconducting properties of granular Bi-2212 superconductor. The results are interpreted in terms of better alignment and inter-connectivity of the grains along with reduction of grain boundaries for Bi2212-MQ sample.
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