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We study the behaviour of the magnetization in a half-metallic ferromagnet/nonmagnetic insulator/ferromagnetic metal/paramagnetic metal (FM1/NI/FM2/PM) tunnel junction. It is calculated self-consistently within the nonequilibrium Keldysh formalism. The magnetic regions are treated as band ferromagnets and are described by the single-band Hubbard model. We developed a nonequilibrium spectral density approach to solve the Hubbard model approximately in the switching magnet. By applying a voltage to the junction it is possible to switch between antiparallel (AP) and parallel (P) alignment of the magnetizations of the two ferromagnets. The transition from AP to P occurs for positive voltages while the inverse transition from P to AP can be induced by negative voltages only. This behaviour is in agreement with the Slonczewski model of current-induced switching and appears self-consistently within the model, i.e. without using half-classical methods like the Landau-Lifshitz-Gilbert equation.
The time-dependent non-crossing approximation is used to study the transient current in a single electron transistor attached asymmetrically to two leads following a sudden change in the energy of the dot level. We show that for asymmetric coupling, sharp features in the density of states of the leads can induce oscillations in the current through the dot. These oscillations persist to much longer timescales than the timescale for charge fluctuations. The amplitude of the oscillations increases as the temperature or source-drain bias across the dot is reduced and saturates for values below the Kondo temperature. We discuss the microscopic origin of these oscillations and comment on the possibility for their experimental detection.
We report on the switching of the in-plane magnetization of thin yttrium iron garnet (YIG)/Pt bilayers induced by an electrical current. The switching is either field-induced and assisted by a dc current, or current-induced and assisted by a static magnetic field. The reversal of the magnetization occurs at a current density as low as $10^5$~A/cm$^{2}$ and magnetic fields of $sim 40$~$mu$T, two orders of magnitude smaller than in ferromagnetic metals, consistently with the weak uniaxial anisotropy of the YIG layers. We use the transverse component of the spin Hall magnetoresistance to sense the magnetic orientation of YIG while sweeping the current. Our measurements and simulations reveal that the current-induced effective field responsible for switching is due to the Oersted field generated by the current flowing in the Pt layer rather than by spin-orbit torques, and that the switching efficiency is influenced by pinning of the magnetic domains.
Using the recently developed Nth-order muffin-tin-orbital (NMTO) based downfolding technique we revisit the electronic properties of half-metallic ferromagnets, the semi-Heusler NiMnSb and rutile CrO2. The NMTO Wannier orbitals for the Mn-d and Cr-t2g manifolds are constructed and the mechanism of chemical bonding is discussed. The effective hopping Hamiltonian parameters are calculated using a NMTO downfolded basis set. We propose model Hamiltonian parameters with possibly minimal basis sets for both half-metallic ferromagnetic alloys.
Antiferromagnets are robust to external electric and magnetic fields, and hence are seemingly uncontrollable. Recent studies, however, realized the electrical manipulations of antiferromagnets by virtue of the antiferromagnetic Edelstein effect. We present a general symmetry analysis of electrically switchable antiferromagnets based on group-theoretical approaches. Furthermore, we identify a direct relation between switchable antiferromagnets and the ferrotoroidic order. The concept of the ferrotoroidic order clarifies the unidirectional nature of switchable antiferromagnets and provides a criterion for the controllability of antiferromagnets. The scheme paves a way for perfect writing and reading of switchable antiferromagnets.
We test whether current-induced magnetization switching due to spin-transfer-torque in ferromagnetic/non-magnetic/ferromagnetic (F/N/F) trilayers changes significantly when scattering within the N-metal layers is changed from ballistic to diffusive. Here ballistic corresponds to a ratio r = lambda/t greater than or equal to 3 for a Cu spacer layer, and diffusive to r = lambda/t less than or equal to 0.4 for a CuGe alloy spacer layer, where lambda is the mean-free-path in the N-layer of fixed thickness t = 10 nm. The average switching currents for the alloy spacer layer are only modestly larger than those for Cu. The best available model predicts a much greater sensitivity of the switching currents to diffuse scattering in the spacer layer than we see.