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Register a new userDifference of Oxide Hetero-Structure Junctions with Semiconductor Electronic Devices
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Charge carrier injection performed in Pr0.7Ca0.3MnO3 (PCMO) hetero-structure junctions exhibits stable without electric fields and dramatic changes in both resistances and interface barriers, which are entirely different from behaviors of semiconductor devices. Disappearance and reversion of interface barriers suggest that the adjustable resistance switching of such hetero-structure oxide devices should associate with motion of charge carriers across interfaces. The results suggested that injected carriers should be still staying in devices and resulted in changes in properties, which guided to a carrier self-trapping and releasing picture in strongly correlated electronic framework. Observations in PCMO and oxygen deficient CeO2 devices show that oxides as functional materials could be used in microelectronics with some novel properties, in which interface is very important.
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We report an experimental study of co, a Mott insulator containing chains of edge-sharing CuO$_4$ plaquettes, by polarized x-ray absorption spectroscopy (XAS), resonant magnetic x-ray scattering (RMXS), magnetic susceptibility, and pyroelectric current measurements. The XAS data show that the valence holes reside exclusively on the Cu$^{2+}$ sites within the copper-oxide spin chains and populate a $d$-orbital polarized within the CuO$_4$ plaquettes. The RMXS measurements confirm the presence of incommensurate magnetic order below a Neel temperature of $T_N = 11.5$ K, which was previously inferred from neutron powder diffraction and nuclear magnetic resonance data. In conjunction with the magnetic susceptibility and XAS data, they also demonstrate a new orbital selection rule for RMXS that is of general relevance for magnetic structure determinations by this technique. Dielectric property measurements reveal the absence of significant ferroelectric polarization below $T_N$, which is in striking contrast to corresponding observations on the isostructural compound lco. The results are discussed in the context of current theories of multiferroicity.
The interface between LaAlO3 and SrTiO3 hosts a two-dimensional electron system of itinerant carriers, although both oxides are band insulators. Interface ferromagnetism coexisting with superconductivity has been found and attributed to local moments. Experimentally, it has been established that Ti 3d electrons are confined to the interface. Using soft x-ray angle-resolved resonant photoelectron spectroscopy we have directly mapped the interface states in k-space. Our data demonstrate a charge dichotomy. A mobile fraction contributes to Fermi surface sheets, whereas a localized portion at higher binding energies is tentatively attributed to electrons trapped by O-vacancies in the SrTiO3. While photovoltage effects in the polar LaAlO3 layers cannot be excluded, the apparent absence of surface-related Fermi surface sheets could also be fully reconciled in a recently proposed electronic reconstruction picture where the built-in potential in the LaAlO3 is compensated by surface O-vacancies serving also as charge reservoir.
The misfit oxide, Bi$_{2}$Ba$_{1.3}$K$_{0.6}$Co$_{2.1}$O$_{y}$, made of alternating rocksalt-structured [BiO/BaO] layers and hexagonal CoO$_{2}$ layers, was studied by angle-resolved photoemission spectroscopy. Detailed electronic structure of such a highly strained oxide interfaces is revealed for the first time. We found that under the two incommensurate crystal fields, electrons are confined within individual sides of the interface, and scattered by umklapp scattering of the crystal field from the other side. In addition, the high strain on the rocksalt layer raises its chemical potential and induces large charge transfer to the CoO$_{2}$ layer. Furthermore, a novel interface effects, the interfacial enhancement of electron-phonon interactions, is discovered. Our findings of these electronic properties lay a foundation for designing future functional oxide interfaces.
Static strain in complex oxide heterostructures has been extensively used to engineer electronic and magnetic properties at equilibrium. In the same spirit, deformations of the crystal lattice with light may be used to achieve functional control across hetero-interfaces dynamically. Here, by exciting large amplitude infrared-active vibrations in a LaAlO3 substrate we induce magnetic order melting in a NdNiO3 film across a hetero-interface. Femtosecond Resonant Soft X-ray Diffraction is used to determine the spatial and temporal evolution of the magnetic disordering. We observe a magnetic melt front that grows from the substrate interface into the film, at a speed that suggests electronically driven propagation. Light control and ultrafast phase front propagation at hetero-interfaces may lead to new opportunities in optomagnetism, for example by driving domain wall motion to transport information across suitably designed devices.
In the Kohn-Sham orbital basis imaginary-time path integral for electrons in a semiconductor nanoparticle has a mild Fermion sign problem and is amenable to evaluation by the standard stochastic methods. This is evidenced by the simulations of silicon hydrogen-passivated nanocrystals, such as $Si_{35}H_{36},~Si_{87}H_{76},~Si_{147}H_{100}$ and $Si_{293}H_{172},$ which contain $176$ to $1344$ valence electrons and range in size $1.0 - 2.4~nm$, utilizing the output of density functional theory simulations. We find that approximating Fermion action with just the leading order polarization term results in a positive-definite integrand in the functional integral, and that it is a good approximation of the full action. We compute imaginary-time electron propagators in these nanocrystals and extract the energies of low-lying electron and hole levels. Our quasiparticle gap predictions agree with the results of high-precision calculations using $G_0W_0$ technique. This formalism can be extended to calculations of more complex excited states, such as excitons and trions.
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