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Semiconductor-based superlens for sub-wavelength resolution below the dif-fraction limit at extreme ultraviolet frequencies

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 Added by Antonella Vincenti
 Publication date 2008
  fields Physics
and research's language is English




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We theoretically demonstrate negative refraction and sub-wavelength resolution below the diffraction limit in the UV and extreme UV ranges using semiconductors. The metal-like re-sponse of typical semiconductors such as GaAs or GaP makes it possible to achieve negative refraction and super-guiding in resonant semiconductor/dielectric multilayer stacks, similar to what has been demonstrated in metallo-dielectric photonic band gap structures. The exploita-tion of this basic property in semiconductors raises the possibility of new, yet-untapped ap-plications in the UV and soft x-ray ranges.



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The diffractive nature of light has limited optics and photonics to operate at scales much larger than the wavelength of light. The major challenge in scaling-down integrated photonics is how to mold the light flow below diffraction-limit in all three dimensions. A high index solid immersion lens can improve the spatial resolution by increasing the medium refractive index, but only to few times higher than in air. Photonic crystals can guide light in three dimensions, however, the guided beam width is around a wavelength. Surface plasmons has a potential to reach the sub-wavelength scales; nevertheless, it is confined in the two-dimensional interface between metals and dielectrics. Here, we present a new approach for molding the light flow at the deep sub-wavelength scale, using metamaterials with uniquely designed dispersion. We develop a design methodology for realizing sub-wavelength ray optics, and demonstrate lambda/10 width light beams flow through three-dimensional space.
Recent theoretical and experimental studies have shown that imaging with resolution well beyond the diffraction limit can be obtained with so-called superlenses. Images formed by such superlenses are, however, in the near field only, or a fraction of wavelength away from the lens. In this paper, we propose a far-field superlens (FSL) device which is composed of a planar superlens with periodical corrugation. We show in theory that when an object is placed in close proximity of such a FSL, a unique image can be formed in far-field. As an example, we demonstrate numerically that images of 40 nm lines with a 30 nm gap can be obtained from far-field data with properly designed FSL working at 376nm wavelength.
We present the experimental reconstruction of sub-wavelength features from the far-field intensity of sparse optical objects: sparsity-based sub-wavelength imaging combined with phase-retrieval. As examples, we demonstrate the recovery of random and ordered arrangements of 100 nm features with the resolution of 30 nm, with an illuminating wavelength of 532 nm. Our algorithmic technique relies on minimizing the number of degrees of freedom; it works in real-time, requires no scanning, and can be implemented in all existing microscopes - optical and non-optical.
We demonstrate that an array of metallic nanorods enables sub-wavelength (near-field) imaging at infrared frequencies. Using an homogenization approach, it is theoretically proved that under certain conditions the incoming radiation can be transmitted by the array of nanorods over a significant distance with fairly low attenuation. The propagation mechanism does not involve a resonance of material parameters and thus the resolution is not strongly affected by material losses and has wide bandwidth. The sub-wavelength imaging with $lambda/10$ resolution by silver rods at 30 THz is demonstrated numerically using full-wave electromagnetic simulator.
345 - H. Nakamura 1999
The finite-difference time-domain (FDTD) method is employed to solve the three dimensional Maxwell equation for the situation of near-field microscopy using a sub-wavelength aperture. Experimental result on unexpected high spatial resolution is reproduced by our computer simulation.
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