Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userDynamic origin of the morphotropic phase boundary - Soft modes and phase instability in 0.68Pb(Mg1/3Nb2/3O3)-0.32PbTiO3
136
0
0.0
(
0
)
Ask ChatGPT about the research
No Arabic abstract
We report neutron inelastic scattering on single crystal 0.68Pb(Mg1/3Nb2/3O3)-0.32PbTiO3 (PMN-0.32PT), a relaxor ferroelectric material that lies within the compositional range of the morphotropic phase boundary (MPB). Data were obtained between 100 K and 600 K under zero and non-zero electric field applied along the cubic [001] direction. The lowest energy, zone-center, transverse optic phonon is strongly damped and softens slowly at high temperature; however the square of the soft mode energy begins to increase linearly with temperature as in a conventional ferroelectric, which we term the soft mode recovery, upon cooling into the tetragonal phase at TC. Our data show that the soft mode in PMN-0.32PT behaves almost identically to that in pure PMN, exhibiting the same temperature dependence and recovery temperature even though PMN exhibits no well-defined structural transition (no TC). The temperature dependence of the soft mode in PMN-0.32PT is also similar to that in PMN-0.60PT; however in PMN-0.60PT the recovery temperature equals TC. These results suggest that the temperature dependence and the energy scale of the soft mode dynamics in PMN-xPT are independent of concentration on the Ti-poor side of the MPB, but scale with TC for Ti-rich compositions. Thus the MPB may be defined in lattice dynamical terms as the concentration where TC first matches the recovery temperature of the soft mode. High-resolution x-ray studies show that the cubic-to-ferroelectric phase boundary shifts to higher temperatures by an abnormal amount within the MPB region in the presence of an electric field. This suggests that an unusual instability exists within the apparently cubic phase at the MPB.
rate research
Read More
Structural phase transformations in (001)-oriented (1-x)Pb(Mg1/3Nb2/3O3)-32%PbTiO3 (PMN-x%PT) crystals have been investigated by x-ray diffraction. A C->T->MC sequence was observed in both the field-cooled (FC) and zero-field-cooled (ZFC) conditions. Most interestingly, an anomalous increase in the C->T phase boundary with increasing field has been observed, which is seemingly a common characteristic of crystals whose compositions are in the vicinity of the MPB, irrespective of the width of the T and MC phase regions.
From the new infrared (IR) reflectivity and time-domain terahertz (THz) spectra combined with available high-frequency dielectric data above the MHz range in a broad temperature range of 10-900 K, a full picture of the soft and central mode behavior in the classical relaxor ferroelectric Pb(Mg1/3Nb2/3)O3 (PMN) is suggested. A detailed comparison is given with the recent hyper-Raman spectroscopy data (Phys. Rev. Lett. 117, 155501 (2016)), and also with other available experiments based on inelastic light and neutron scattering. The closest agreement is with the hyper-Raman data, both techniques yield the same number of soft-mode components and the same high-temperature softening towards the temperature T* ~ 400 K. In addition to evaluation of the IR-THz data using fitting with standard factorized form of the dielectric function, we performed a successful fitting of the same data using the effective medium approach (EMA), originally based on the assumption that the mesoscopic structure of PMN consists of randomly oriented uniaxially anisotropic polar nanodomains (PNDs) with somewhat harder TO polar modes in the direction along the local PND dipole (Phys. Rev. Lett. 96, 027601 (2006)). Evaluation using the Bruggeman EMA modelling has been successfully applied in the entire investigated temperature range. These results suggest that the response perpendicular to the local dipole moment, at high temperatures induced by random fields rather than PNDs, undergoes a classical softening from high temperatures with permittivity obeying the Curie-Weiss law, eps_per = C/(T-Tc), C = 1.7 x 10^5 K and Tc = 380 K. Below the Burns temperature ~620 K, a GHz relaxation ascribed to flipping of the PNDs emerges from the soft mode response, slows down and broadens, remaining quite strong towards the cryogenic temperatures, where it can be assigned to fluctuations of the PND boundaries.
Temperature dependent structural changes in a nearly pure monoclinic phase composition (x=0.525) of Pb(Zr_xTi_1-x)O_3 (PZT) have been investigated using Rietveld analysis of high-resolution synchrotron powder x-ray diffraction data and correlated with changes in the dielectric constant and planar electromechanical coupling coefficient. Our results show that the intrinsic piezoelectric response of the tetragonal phase of PZT is higher than that of the monoclinic phase. It is also shown that the high piezoelectric response of PZT may be linked with an anomalous softening of the elastic modulus (1/S_11) of the tetragonal compositions closest to the morphotropic phase boundary.
Morphotropic phase boundaries (MPBs) show substantial piezoelectric and dielectric responses, which have practical applications. The predicted existence of MPB in HfO2-ZrO2 solid solution thin film has provided a new way to increase the dielectric properties of a silicon-compatible device. Here, we present a new fabrication design by which the density of MPB and consequently the dielectric constant of HfO2-ZrO2 thin film was considerably increased. The density of MPB was controlled by fabrication of a 10-nm [1 nm-Hf0.5Zr0.5O2 (Ferroelectric)/1 nm-ZrO2 (Antiferroelectric)] nanolaminate followed by an appropriate annealing process. The coexistence of orthorhombic and tetragonal structures, which are the origins of ferroelectric (FE) and antiferroelectric (AFE) behaviors, respectively, was structurally confirmed, and a double hysteresis loop that originates from AFE ordering, with some remnant polarization that originates from FE ordering, was observed in P-E curve. A remarkable increase in dielectric constant compared to the conventional HfO2-ZrO2 thin film was achieved by controlling the FE-AFE ratio. The fabrication process was performed at low temperature and the device is compatible with silicon technology, so the new design yields a device that has possible applications in near-future electronics.
Two-dimensional polarity is intriguing but remains in the early stage. Here a structural evolution diagram is established for GeS monolayer, which leads a noncollinear ferrielectric $delta$-phase energetically as stable as the ferroelectric $alpha$-phase. Its ferrielectricity is induced by the phonon frustration, i.e., the competition between ferroelectric and antiferroelectric modes, providing more routes to tune its polarity. Besides its prominent properties like large band gap, large polarization, and high Curie temperature, more interestingly, the morphotropic phase boundary between $alpha$- and $delta$-phases is highly possible, which is crucial to obtain giant piezoelectricity for lead-free applications.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
