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Effects of different geometries on the conductance, shot noise and tunnel magnetoresistance of double quantum dots

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 Added by Ireneusz Weymann
 Publication date 2008
  fields Physics
and research's language is English
 Authors I. Weymann




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The spin-polarized transport through a coherent strongly coupled double quantum dot (DQD) system is analyzed theoretically in the sequential and cotunneling regimes. Using the real-time diagrammatic technique, we analyze the current, differential conductance, shot noise and tunnel magnetoresistance (TMR) as a function of both the bias and gate voltages for double quantum dots coupled in series, in parallel as well as for T-shaped systems. For DQDs coupled in series, we find a strong dependence of the TMR on the number of electrons occupying the double dot, and super-Poissonian shot noise in the Coulomb blockade regime. In addition, for asymmetric DQDs, we analyze transport in the Pauli spin blockade regime and explain the existence of the leakage current in terms of cotunneling and spin-flip cotunneling-assisted sequential tunneling. For DQDs coupled in parallel, we show that the transport characteristics in the weak coupling regime are qualitatively similar to those of DQDs coupled in series. On the other hand, in the case of T-shaped quantum dots we predict a large super-Poissonian shot noise and TMR enhanced above the Julliere value due to increased occupation of the decoupled quantum dot. We also discuss the possibility of determining the geometry of the double dot from transport characteristics. Furthermore, where possible, we compare our results with existing experimental data on nonmagnetic systems and find qualitative agreement.



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Spin-dependent transport through a multilevel quantum dot weakly coupled to ferromagnetic leads is analyzed theoretically by means of the real-time diagrammatic technique. Both the sequential and cotunneling processes are taken into account, which makes the results on tunnel magnetoresistance (TMR) and shot noise applicable in the whole range of relevant bias and gate voltages. Suppression of the TMR due to inelastic cotunneling and super-Poissonian shot noise have been found in some of the Coulomb blockade regions. Furthermore, in the Coulomb blockade regime there is an additional contribution to the noise due to bunching of cotunneling processes involving the spin-majority electrons. On the other hand, in the sequential tunneling regime TMR oscillates with the bias voltage, while the current noise is generally sub-Poissonian.
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