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Register a new userDispersion of Resonant Raman Peaks of CO and OH in SnO2, Mo1-x FexO2 Thin Films and SiO2 bulk glass
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Resonance Raman (RR) peaks of and stretching modes and their higher harmonics have been observed superimposed on photoluminescence (PL) spectrum of thin films. Commercial fluorine doped thin films deposited by sputtering on glass and thin films deposited on Si by laser ablation have been studied. The dispersions of CO and OH stretching RR modes are ~ 600 cm-1/eV and 800 cm-1 respectively. The dispersion of the third harmonic of CO stretching mode is ~ 2000 cm-1/eV. Similar dispersion of RR peak of stretching modes and higher harmonics superimposed on PL spectra has been observed in Mo1-xFexO2 thin films and SiO2 bulk glass. Large dispersion of RR peaks seems to be a common property of oxides with impurities of and .
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Resonant Raman spectra (RRS) of O-H and O-D vibration and libration modes, their combinations and higher harmonics have been observed in LiTaO3 polycrystalline thin films. RRS peaks are superimposed on photoluminescence (PL) spectrum. Monochromatic light from a xenon lamp is used as excitation source. PL spectrum shows two broad peaks, first near the band gap in UV (4.4-4.8eV) and another in the sub band gap region (< 4.0 eV). Band gap PL along with RRS peaks are reported for the first time. Photoluminescence excitation spectrum (PLE) shows a peak at 4.8 eV. Peak positions and full width at half maximum (FWHM) of RRS peaks depend upon the excitation energy. Dispersions of the fundamental and the third harmonic of the stretching mode of O-H with excitation energy are about 800 cm-1/eV and 2000 cm-1/eV respectively. This dispersion is much higher than reported in any other material.
The Raman shifts of nanocrystalline GaSb excited by an Ar+ ion laser of wavelengths 514.5, 496.5, 488.0, 476.5, and 457.9 nm are studied by experiment and explained by phonon confinement, tensile stress, resonance Raman scattering and quantum size effects. The Stokes and anti-Stokes Raman spectra of GaSb nanocrystals strongly support the Raman feature of GaSb nanocrystals. Calculated optical spectra compare well with experimental data on Raman scattering GaSb nanocrystals.
Valence band onset (Ev), valence band tail (VBT) and valence plasmons (VPs) have been studied as a function of sputtering of SnO2 and In2-xSnxO3 (ITO) thin films, using ultraviolet photoemission spectroscopy (UPS). Decrease in Ev with respect to the Fermi level and increase in the density of energy levels of VBT have been observed after 5 minutes of sputtering using Ar+ ions (500V). Bulk and surface components of VPs of Sn, SnO and SnO2 in sputtered SnO2 thin films have been observed in UPS spectra. Similarly, bulk and surface components of VPs of In, Sn and oxygen deficient ITO in sputtered ITO thin films have been observed in UPS spectra. Possible roles of Ev and increase in the density of energy levels of VBT are discussed in the mechanisms of current transport through heterojunctions of SnO2 with semiconductors.
We have studied magnetism in Ti_[1-x]Co_xO_[2-delta] thin films with various x and delta by soft x-ray magnetic circular dichroism (XMCD) measurements at the Co L_[2,3] absorption edges. The estimated ferromagnetic moment by XMCD was 0.15-0.24 mubeta/Co in the surface, while in the bulk it was 0.82-2.25 mubeta/Co, which is in the same range as the saturation magnetization of 1.0-1.5 mubeta/Co. Theseresults suggest that the intrinsic origin of the erromagnetism. The smaller moment of Co atom at surface is an indication of a magnetically dead layer of a few nm thick at the surface of the thin films.
Binary collision simulations of high-fluence 1 keV Si ion implantation into 8 nm thick SiO2 films on (001)Si were combined with kinetic Monte Carlo simulations of Si nanocrystal (NC) formation by phase separation during annealing. For nonvolatile memory applications, these simulations help to control size and location of NCs. For low concentrations of implanted Si, NCs form via nucleation, growth and Ostwald ripening, whereas for high concentrations Si separates by spinodal decomposition. In both regimes, NCs form above a thin NC free oxide layer at the SiO2/Si interface. This, self-adjusted layer has just a thickness appropriate for NC charging by direct electron tunneling. Only in the nucleation regime the width of the tunneling oxide and the mean NC diameter remain constant during a long annealing period. This behavior originates from the competition of Ostwald ripening and Si loss to the Si/SiO2 interface. The process simulations predict that, for nonvolatile memories, the technological demands on NC synthesis are fulfilled best in the nucleation regime.
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