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Register a new userQuantized current of a hybrid single-electron transistor with superconducting leads and a normal-metal island
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We discuss the operation of the superconductor - insulator - normal-metal - insulator - superconductor (SINIS) turnstile. This voltage-biased hybrid single-electron transistor (SET) provides current quantization even with only one radio-frequency (rf) control parameter, namely the gate voltage of the single island. We give an overview of the main error mechanisms of the turnstile and consider its feasibility as a quantum current standard. We also present experimental results of pumping with the SINIS structure which show decreased leakage current compared to earlier measurements with the opposite NISIN structure.
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We present a linear-response theory for the thermopower of a single-electron transistor consisting of a superconducting island weakly coupled to two normal-conducting leads (NSN SET). The thermopower shows oscillations with the same periodicity as the conductance and is rather sensitive to the size of the superconducting gap. In particular, the previously studied sawtooth-like shape of the thermopower for a normal-conducting single-electron device is qualitatively changed even for small gap energies.
We investigate a hybrid structure consisting of $20pm4$ implanted $^{31}$P atoms close to a gate-induced silicon single electron transistor (SiSET). In this configuration, the SiSET is extremely sensitive to the charge state of the nearby centers, turning from the off state to the conducting state when the charge configuration is changed. We present a method to measure fast electron tunnel rates between donors and the SiSET island, using a pulsed voltage scheme and low-bandwidth current detection. The experimental findings are quantitatively discussed using a rate equation model, enabling the extraction of the capture and emission rates.
Crossed Andreev reflection (cAR) is a scattering process that happens in a quantum transport set-up consisting of two normal metals (NM) attached to a superconductor (SC), where an electron incident from one NM results in a hole emerging in the other. Typically, an electron tunnelling through the superconductor from one NM to the other (ET) competes with cAR and masks the signature of cAR in the conductance spectrum. We propose a novel scheme to enhance cAR, in which SC part of the NM-SC-NM is side-coupled to another SC having a different SC phase to form a Josephson junction in the transverse direction. At strong enough coupling and adequate phase difference, one can smoothly traverse between highly ET-dominant to highly cAR-dominant transport regimes by tuning chemical potential, due to the appearance of subgap Andreev states that are extended in the longitudinal direction. We also discuss connections to realistic systems.
We present an analysis of the dynamics of a nanomechanical resonator coupled to a superconducting single electron transistor (SSET) in the vicinity of the Josephson quasiparticle (JQP) and double Josephson quasiparticle (DJQP) resonances. For weak coupling and wide separation of dynamical timescales, we find that for either superconducting resonance the dynamics of the resonator is given by a Fokker-Planck equation, i.e., the SSET behaves effectively as an equilibrium heat bath, characterised by an effective temperature, which also damps the resonator and renormalizes its frequency. Depending on the gate and drain-source voltage bias points with respect to the superconducting resonance, the SSET can also give rise to an instability in the mechanical resonator marked by negative damping and temperature within the appropriate Fokker-Planck equation. Furthermore, sufficiently close to a resonance, we find that the Fokker-Planck description breaks down. We also point out that there is a close analogy between coupling a nanomechanical resonator to a SSET in the vicinity of the JQP resonance and Doppler cooling of atoms by means of lasers.
We have suspended an Al based single-electron transistor whose island can resonate freely between the source and drain leads forming the clamps. In addition to the regular side gate, a bottom gate with a larger capacitance to the SET island is placed underneath to increase the SET coupling to mechanical motion. The device can be considered as a doubly clamped Al beam that can transduce mechanical vibrations into variations of the SET current. Our simulations based on the orthodox model, with the SET parameters estimated from the experiment, reproduce the observed transport characteristics in detail.
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