No Arabic abstract
Thermoelectric power, S(T) of the Mg1-xAlxB2 system has been measured for x = 0.0, 0.1, 0.2, 0.4, 0.6, 0.8 and 1.0. XRD, resistivity and magnetization measurements are also presented. It has been found that the thermoelectric power is positive for x = 0.4 and is negative for x = 0.6 over the entire temperature range studied up to 300 K. The thermoelectric power of x = 0.4 samples vanishes discontinuously below a certain temperature, implying existence of superconductivity. In general, the magnitude of the thermoelectric power increases with temperature up to a certain temperature, and then it starts to decrease towards zero base line. In order to explain the observed behavior of the thermoelectric power, we have used a model in which both diffusion and phonon drag processes are combined by using a phenomenological interpolation between the low and high temperature behaviors of the thermoelectric power. The considered model provides an excellent fit to the observed data. It is further found that Al doping enhances the Debye temperature.
Results of thermo-electric power (S) and electrical resistivity (r) measurements are reported on NaxCoO2 compounds with x = 1.0, 0.7 and 0.6. These are single-phase compounds crystallizing in the hexagonal structure (space group P63/mmc) at room temperature. Thermo-electric power values at 300K (S300K) are, 80mV/K, 39mV/K and 37mV/K for x = 1.0, 0.7 and 0.6 samples, respectively. The samples with x=0.7 and 1.0 are metallic down to 5 K, while the x = 0.6 sample is semiconducting. The value of r300K for x = 1.0 sample is ~0.895 mW-cm and the power factor (S2/r) is = 7.04 x 10-3 W/mK2 which qualifies it as a good thermo-electric material. In x =1.0 sample, S(T) is positive throughout 300-5K temperature range and decreases monotonically to zero as temperature T= 0. In contrast, S(T) of x = 0.7 and 0.6 samples changes sign and shows negative values between 90 K and 16 K before approaching zero as T = 0. Anomalous S(T) behavior of x = 0.6 and 0.7 samples, which are coincidentally the precursor materials to the reported superconductivity in this class of materials, indicates a dramatic change in the electronic structure of these compounds on lowering the Na content.
The physical property characterization of Al doped Mg1-xAlxB2 system with x = 0.0 to 0.50 is reported. The results related to phase formation, structural transition, resistivity R(T) and magnetization M(T) measurements are discussed in detail. It is shown that the addition of electrons to MgB2 through Al results in loss of superconductivity. Also seen is a structural transition associated with the collapse of boron layers reflected by the continuous decrease in the c parameter. The main emphasis in this paper is on slow scan X-ray diffraction (XRD) results, which confirm the existence of a superstructure along the c-direction for the x = 0.50 sample. The appearance of some additional peaks, viz. [103], [004], [104] and [112], results in doubling of the lattice parameter along the c-axis. This possibly indicates the alternative ordering of Al and Mg in MgAlB4 separated by hexagonal boron layers but still maintaining the same hexagonal AlB2 type structure.
Here we report the structural, electrical and magnetic properties of Fe doped La0.7Ca0.3Mn1-xFexO3 with x = 0.0 to 1.0 prepared by conventional solid state reaction method. Simulated data on XRD shows an increase in volume with an increase in Fe ion concentration. XPS supports that Fe3+ ions directly substitute Mn3+ ions. Shifting towards lower wave-number and symmetric IR band structure confirms increase in volume and homogeneous distribution of Fe ions. Fe ion doesnt contribute in double-exchange (DE) conduction mechanism due to its stable half filled 3d orbital. The presence of Fe3+ ions encourages anti-ferromagnetism (AFM) generated by super-exchange interaction and suppress insulator-metal transition temperature (TIM). Magnetic measurements show the existence of magnetic polarons supported by increase in volume of unit cell and deviation from Curie-Weiss law.
We report the synthesis and physical property characterization of PrFe1-xCoxAsO with x = 0.0 to 1.0. The studied samples are synthesized by solid state reaction route via vacuum encapsulation method. The pristine compound PrFeAsO does not show superconductivity, but rather exhibits a metallic step like transition due to spin density wave ordering of Fe moments below 150 K, followed by another upward step due to anomalous ordering of Pr moments at 12 K. Both the Fe-SDW and Pr-TN temperatures decrease monotonically with Co substitution at Fe site. Superconductivity appears in a narrow range of x from 0.07 to 0.25 with maximum Tc at 11.12 K for x = 0.15. Samples, with x = 0.25 exhibit metallic behavior right from 300 K down to 2 K, without any Fe-SDW or Pr-TN steps in resistivity. In fact, though Fe-SDW decreases monotonically, the Pr-TN is disappeared even with x = 0.02. The magneto transport measurements below 14 Tesla on superconducting polycrystalline Co doped PrFeAsO lead to extrapolated values of the upper critical fields [Hc2(0)] of up to 60 Tesla.
There exist experiments indicating that at certain conditions, such as an appropriate substrate, a gap of the order of 10 meV can be opened at the Dirac points of a quasiparticle spectrum of graphene. We demonstrate that the opening of such a gap can result in the appearance of a fingerprint bump of the Seebeck signal when the chemical potential approaches the gap edge. The magnitude of the bump can be up to one order higher than the already large value of the thermopower occurring in graphene. Such a giant effect, accompanied by the nonmonotonous dependence on the chemical potential, is related to the emergence of a new channel of quasiparticle scattering from impurities with the relaxation time strongly dependent on the energy. We analyze the behavior of conductivity and thermopower in such a system, accounting for quasiparticle scattering from impurities with the model potential in a self-consistent scheme. Reproducing the existing results for the case of gapless graphene, we demonstrate a failure of the simple Mott formula in the case under consideration.