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Register a new userElectron resonant tunneling through InAs/GaAs quantum dots embedded in a Schottky diode with an AlAs insertion layer
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Molecular beam epitaxy is employed to manufacture self-assembled InAs/GaAs quantum dot Schottky resonant tunneling diodes. By virtue of a thin AlAs insertion barrier, the thermal current is effectively reduced and electron resonant tunneling through quantum dots under both forward and reverse biased conditions is observed at relatively high temperature of 77K. The ground states of quantum dots are found to be at ~0.19eV below the conduction band of GaAs matrix. The theoretical computations are in conformity with experimental data.
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Molecular beam epitaxy is employed to manufacture self-assembled InAs/AlAs quantum-dot resonant tunneling diodes. Resonant tunneling current is superimposed on the thermal current, and they make up the total electron transport in devices. Steps in current-voltage characteristics and peaks in capacitance-voltage characteristics are explained as electron resonant tunneling via quantum dots at 77K or 300K, and this is the first time that resonant tunneling is observed at room temperature in III-V quantum-dot materials. Hysteresis loops in the curves are attributed to hot electron injection/emission process of quantum dots, which indicates the concomitant charging/discharging effect.
Two dimensional InAs/GaAs quantum ring (QR) is considered using the effective potential approach. The symmetry of QR shape is violated as it is in the well-known Bohigas annular billiard. We calculate energy spectrum and studied the spatial localization of a single electron in such QR. For weak violation of the QR shape symmetry, the spectrum is presented as a set of quasi-doublets. Tunneling between quasi-doublet states is studied by the dependence on energy of the states. The dependence is changed with variation of the QR geometry that is related to the eccentricity of the QR. An interpretation of the experimental result obtained in [1] is proposed. We show that the chaos-assisted tunneling effect found in this paper can be explained by inter-band interactions occurred by anti-crossing of the levels with different radial quantum numbers.
We investigated the size dependence of the ground state energy in self-assembled InAs quantum dots embedded in resonant tunneling diodes. Individual current steps observed in the current-voltage characteristics are attributed to resonant single-electron tunneling via the ground state of individual InAs quantum dots. The onset voltage of the first step observed is shown to decrease systematically from 200 mV to 0 with increasing InAs coverage. We relate this to a coverage-dependent size of InAs dots grown on AlAs. The results are confirmed by atomic force micrographs and photoluminescence experiments on reference samples.
We have fabricated superconductor-quantum dot-superconductor (SC-QD-SC) junctions by using SC aluminum electrodes with narrow gaps laterally contacting a single self-assembled InAs QD. The fabricated junctions exhibited clear Coulomb staircases and Coulomb oscillations at 40 mK. Furthermore, clear suppression in conductance was observed for the source-drain voltage $|V_{rm SD}| < 2Delta/e$, where $Delta$ is the SC energy gap of Al. The absence of Josephson current that flows through QDs is due to the strong Coulomb interaction and non-negligible thermal fluctuation in our measurement system.
A scheme of resonant tunneling through the metastable state of semiconductor quantum dot is presented and implemented in the transport study of freestanding InAs quantum dots grown on GaAs(001) under illumination using conductive atomic force microscopy. The metastable state is achieved by capturing one photoexcited Fermi hole in the valence energy level of InAs quantum dot. Resonant tunneling through single quantum dot can be observed at room temperature due to the existence of metastable state. The amplitude of tunneling current depends on the barrier arrangement and the concentration of photoexcited holes around the quantum dot, but is found steady when the height of dot varies from 1.8 to 9.9 nm, which are in good agreement with the proposed model. The experiment demonstrates a solution of room temperature operated single electron device to amplify the photocurrent by the singularity of resonant tunneling in epitaxial quantum dot.
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