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Register a new userProbing the doping in metallic and semiconducting carbon nanotubes by Raman and transport measurements
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In-situ Raman experiments together with transport measurements have been carried out on carbon nanotubes as a function of gate voltage. In metallic tubes, a large increase in the Raman frequency of the $G^-$ band, accompanied by a substantial decrease of its line-width, is observed with electron or hole doping. In addition, we see an increase in Raman frequency of the $G^+$ band in semiconducting tubes. These results are quantitatively explained using ab-initio calculations that take into account effects beyond the adiabatic approximation. Our results imply that Raman spectroscopy can be used as an accurate measure of the doping of both metallic and semiconducting nanotubes.
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The dynamical conductance of electrically contacted single-walled carbon nanotubes is measured from dc to 10 GHz as a function of source-drain voltage in both the low-field and high-field limits. The ac conductance of the nanotube itself is found to be equal to the dc conductance over the frequency range studied for tubes in both the ballistic and diffusive limit. This clearly demonstrates that nanotubes can carry high-frequency currents at least as well as dc currents over a wide range of operating conditions. Although a detailed theoretical explanation is still lacking, we present a phenomenological model of the ac impedance of a carbon nanotube in the presence of scattering that is consistent with these results.
The electronic Raman scattering (ERS) features of single-walled carbon nanotubes (SWNTs) can reveal a wealth of information about their electronic structures, but have previously been thought to appear exclusively in metallic (M-) but not in semiconducting (S-) SWNTs. We report the experimental observation of the ERS features with an accuracy of 1 meV in suspended S-SWNTs, the processes of which are accomplished via the available high-energy electron-hole pairs. The ERS features can facilitate further systematic studies on the properties of SWNT, both metallic and semiconducting, with defined chirality.
We study theoretically the impact of Zener tunneling on the charge-transport properties of quasi-metallic (Qm) carbon nanotubes (characterized by forbidden band gaps of few tens of meV). We also analyze the interplay between Zener tunneling and elastic scattering on defects. To this purpose we use a model based on the master equation for the density matrix, that takes into account the inter-band Zener transitions induced by the electric field (a quantum mechanical effect), the electron-defect scattering and the electron-phonon scattering. In presence of Zener tunnelling the Qm tubes support an electrical current even when the Fermi energy lies in the forbidden band gap. In absence of elastic scattering (in high quality samples), the small size of the band gap of Qm tubes enables Zener tunnelling for realistic values of the the electric field (above $sim$ 1 V/mu m). The presence of a strong elastic scattering (in low quality samples) further decreases the values of the field required to observe Zener tunnelling. Indeed, for elastic-scattering lengths of the order of 50 nm, Zener tunnelling affects the current/voltage characteristic already in the linear regime. In other words, in quasi-metallic tubes, Zener tunneling is made more visible by defects.
In carbon nanotubes, the most abundant defects, caused for example by irradiation or chemisorption treatments, are small perturbing clusters, i.e. bi-site defects, extending over both A and B sites. The relative positions of these perturbing clusters play a crucial role in determining the electronic properties of carbon nanotubes. Using bandstructure and electronic transport calculations, we find out that in the case of armchair metallic nanotubes a band gap opens up when the clusters fulfill a certain periodicity condition. This phenomenon might be used in future nanoelectronic devices in which certain regions of single metallic nanotubes could be turned to semiconducting ones. Although in this work we study specifically the effect of hydrogen adatom clusters, the phenomenon is general for different types of defects. Moreover, we study the influence of the length and randomness of the defected region on the electron transport through it.
Using the real-time diagrammatic technique and taking into account both the sequential and cotunneling processes, we analyze the transport properties of single-wall metallic carbon nanotubes coupled to nonmagnetic and ferromagnetic leads in the full range of parameters. In particular, considering the two different shell filling schemes of the nanotubes, we discuss the behavior of the differential conductance, tunnel magnetoresistance and the shot noise. We show that in the Coulomb diamonds corresponding to even occupations, the shot noise becomes super-Poissonian due to bunching of fast tunneling processes resulting from the dynamical channel blockade, whereas in the other diamonds the noise is roughly Poissonian, in agreement with recent experiments. The tunnel magnetoresistance is very sensitive to the number of electrons in the nanotube and exhibits a distinctively different behavior depending on the shell filling sequence of the nanotube.
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