Do you want to publish a course? Click here

Observation of Spin-glass-like Behavior in SrRuO3 Epitaxial Thin Films

538   0   0.0 ( 0 )
 Added by Ratnakar Palai
 Publication date 2009
  fields Physics
and research's language is English




Ask ChatGPT about the research

We report the observation of spin-glass-like behavior and strong magnetic anisotropy in extremely smooth (~1-3 AA) roughness) epitaxial (110) and (010) SrRuO3 thin films. The easy axis of magnetization is always perpendicular to the plane of the film (unidirectional) irrespective of crystallographic orientation. An attempt has been made to understand the nature and origin of spin-glass behavior, which fits well with Heisenberg model.



rate research

Read More

Berry curvature plays a crucial role in exotic electronic states of quantum materials, such as intrinsic anomalous Hall effect. As Berry curvature is highly sensitive to subtle changes of electronic band structures, it can be finely tuned via external stimulus. Here, we demonstrate in SrRuO3 thin films that both the magnitude and sign of anomalous Hall resistivity can be effectively controlled with epitaxial strain. Our first-principles calculations reveal that epitaxial strain induces an additional crystal field splitting and changes the order of Ru d orbital energies, which alters the Berry curvature and leads to the sign and magnitude change of anomalous Hall conductivity. Furthermore, we show that the rotation of Ru magnetic moment in real space of tensile strained sample can result in an exotic nonmonotonic change of anomalous Hall resistivity with the sweeping of magnetic field, resembling the topological Hall effect observed in non-coplanar spin systems. These findings not only deepen our understanding of anomalous Hall effect in SrRuO3 systems, but also provide an effective tuning knob to manipulate Berry curvature and related physical properties in a wide range of quantum materials.
We report a giant resistance drop induced by dc electrical currents in La0.67Ca0.33MnO3 epitaxial thin films. Resistance of the patterned thin films decreases exponentially with increasing current and a maximum drop shows at the temperature of resistance peak Tp. Variation of resistance with current densities can be scaled below and above Tp, respectively. This work can be useful for the future applications of electroresistance.
130 - Daesu Lee , A. Yoon , S. Y. Jang 2011
We report on nanoscale strain gradients in ferroelectric HoMnO3 epitaxial thin films, resulting in a giant flexoelectric effect. Using grazing-incidence in-plane X-ray diffraction, we measured strain gradients in the films, which were 6 or 7 orders of magnitude larger than typical values reported for bulk oxides. The combination of transmission electron microscopy, electrical measurements, and electrostatic calculations showed that flexoelectricity provides a means of tuning the physical properties of ferroelectric epitaxial thin films, such as domain configurations and hysteresis curves.
129 - S. Y. Jang , D. Lee , J.-H. Lee 2009
Epitaxial thin films of hexagonal ErMnO3 fabricated on Pt(111)/Al2O3(0001) and YSZ(111) substrates exhibited both ferroelectric character and magnetic ordering at low temperatures. As the temperature was reduced, the ErMnO3 films first showed antiferromagnetism. At lower temperatures, the films deposited at lower oxygen partial pressures exhibited spin glass behavior. This re-entrant spin glass behavior was attributed to competition between an antiferromagnetic interaction in the hexagonal geometry and a ferromagnetic interaction caused by a change in Mn valence induced by excess electrons from the oxygen vacancies.
Epitaxial thin films of SrRuO3 with large strain disorder were grown using pulsed laser deposition method which showed two distinct transition temperatures in Magnetic measurements. For the first time, we present visual evolution of magnetic domains across the two transitions using Magnetic force microscopy on these films. The study clearly showed that the magnetic anisotropy corresponding to the two transitions is different. It is observed that the perpendicular magnetic anisotropy is dominating in films which results in domain spin orientation preferably in out of plane direction. The Raman studies showed that the lattice is highly influenced by the magnetic order. The analysis of the phonon spectra around magnetic transition reveals the existence of strong spin-phonon coupling and the calculations resulted in spin-phonon coupling strength ({lambda}) values of {lambda} ~ 5 cm-1 and {lambda} ~ 8.5 cm-1, for SrRuO3 films grown on LSAT and SrTiO3 single crystal substrates, respectively.
comments
Fetching comments Fetching comments
Sign in to be able to follow your search criteria
mircosoft-partner

هل ترغب بارسال اشعارات عن اخر التحديثات في شمرا-اكاديميا