Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userEnhanced spin-orbit scattering length in narrow Al_xGa_{1-x}N/GaN wires
103
0
0.0
(
0
)
Ask ChatGPT about the research
No Arabic abstract
The magnetotransport in a set of identical parallel AlGaN/GaN quantum wire structures was investigated. The width of the wires was ranging between 1110 nm and 340 nm. For all sets of wires clear Shubnikov--de Haas oscillations are observed. We find that the electron concentration and mobility is approximately the same for all wires, confirming that the electron gas in the AlGaN/GaN heterostructure is not deteriorated by the fabrication procedure of the wire structures. For the wider quantum wires the weak antilocalization effect is clearly observed, indicating the presence of spin-orbit coupling. For narrow quantum wires with an effective electrical width below 250 nm the weak antilocalization effect is suppressed. By comparing the experimental data to a theoretical model for quasi one-dimensional structures we come to the conclusion that the spin-orbit scattering length is enhanced in narrow wires.
rate research
Read More
The surface-enhanced Raman scattering in graphene deposited on AlxGa1-xN/GaN axial heterostructure nanowires was investigated. The intensity of graphene Raman spectra was found not to be correlated with aluminium content. Analysis of graphene Raman bands parameters, KPFM and electroreflectance showed a screening of polarization charges. Theoretical calculations showed that plasmon resonance in graphene is far beyond the Raman spectral range. This excludes the presence of an electromagnetic mechanism of SERS and therefore suggests the chemical mechanism of enhancement.
How does an initially homogeneous spin-polarization in a confined two-dimensional electron gas with Rashba spin-orbit coupling evolve in time? How does the relaxation time depend on system size? We study these questions for systems of a size that is much larger than the Fermi wavelength, but comparable and even shorter than the spin relaxation length. Depending on the confinement spin-relaxation may become faster or slower than in the bulk. An initially homogeneously polarized spin system evolves into a spiral pattern.
While tremendous work has gone into spin-orbit torque and spin current generation, charge-to-spin conversion efficiency remains weak in silicon to date, generally stemming from the low spin-orbit coupling (low atomic number, Z) and lack of bulk lattice inversion symmetry breaking. Here we report the observation of spin-orbit torque in an amorphous, non-ferromagnetic Fe$_{x}$Si$_{1-x}$ / cobalt bilayer at room temperature, using spin torque ferromagnetic resonance and harmonic Hall measurements. Both techniques provide a minimum spin torque efficiency of about 3 %, comparable to prototypical heavy metals such as Pt or Ta. According to the conventional theory of the spin Hall effect, a spin current in an amorphous material is not expected to have any substantial contribution from the electronic bandstructure. This, combined with the fact that Fe$_{x}$Si$_{1-x}$ does not contain any high-Z element, paves a new avenue for understanding the underlying physics of spin-orbit interaction and opens up a new class of material systems - silicides - that is directly compatible with complementary metal-oxide-semiconductor (CMOS) processes for integrated spintronics applications.
We propose a new method for dynamic nuclear polarisation in a quasi one-dimensional quantum wire utilising the spin-orbit interaction, the hyperfine interaction, and a finite source-drain potential difference. In contrast with current methods, our scheme does not rely on external magnetic or optical sources which makes independent control of closely placed devices much more feasible. Using this method, a significant polarisation of a few per cent is possible in currently available InAs wires which may be detected by conductance measurements. This may prove useful for nuclear-magnetic-resonance studies in nanoscale systems as well as in spin-based devices where external magnetic and optical sources will not be suitable.
The spin-orbit coupling (SOC) in semiconductors is strongly influenced by structural asymmetries, as prominently observed in bulk crystal structures that lack inversion symmetry. Here, we study an additional effect on the SOC: the asymmetry induced by the large interface area between a nanowire core and its surrounding shell. Our experiments on purely wurtzite GaAs/AlGaAs core/shell nanowires demonstrate optical spin injection into a single free-standing nanowire and determine the effective electron g-factor of the hexagonal GaAs wurtzite phase. The spin relaxation is highly anisotropic in time-resolved micro-photoluminescence measurements on single nanowires, showing a significant increase of spin relaxation in external magnetic fields. This behavior is counterintuitive compared to bulk wurtzite crystals. We present a model for the observed electron spin dynamics highlighting the dominant role of the interface-induced SOC in these core/shell nanowires. This enhanced SOC may represent an interesting tuning parameter for the implementation of spin-orbitronic concepts in semiconductor-based structures.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
