No Arabic abstract
We have successfully grown the single crystals of CeAg$_2$Ge$_2$, for the first time, by flux method and studied the anisotropic physical properties by measuring the electrical resistivity, magnetic susceptibility and specific heat. We found that CeAg$_2$Ge$_2$ undergoes an antiferromagnetic transition at $T_{rm N}$ = 4.6 K. The electrical resistivity and susceptibility data reveal strong anisotropic magnetic properties. The magnetization measured at $T$ = 2 K exhibited two metamagnetic transitions at $H_{rm m1}$ = 31 kOe and $H_{rm m2}$ = 44.7 kOe, for $H parallel$ [100] with a saturation magnetization of 1.6 $mu_{rm B}$/Ce. The crystalline electric field (CEF) analysis of the inverse susceptibility data reveals that the ground state and the first excited states of CeAg$_2$Ge$_2$ are closely spaced indicating a quasi-quartet ground state. The specific heat data lend further support to the presence of closely spaced energy levels.
The anisotropic magnetic properties of the antiferromagnetic compound CePd$_2$Ge$_2$, crystallizing in the tetragonal crystal structure have been investigated in detail on a single crystal grown by Czochralski method. From the electrical transport, magnetization and heat capacity data, the N{e}el temperature is confirmed to be 5.1 K. Anisotropic behaviour of magnetization and resistivity is observed along the two principal crystallographic directions viz., [100] and [001]. The isothermal magnetization measured in the magnetically ordered state at 2 K exhibits a spin re-orientation at 13.5 T for field applied along [100] direction, whereas the magnetization was linear along the [001] direction attaining a value of 0.94 $mu_{rm B}$/Ce at 14 T. The reduced value of the magnetization is attributed to the crystalline electric field (CEF) effects. A sharp jump in the specific heat at the magnetic ordering temperature is observed. After subtracting the phononic contribution, the jump in the heat capacity amounts to 12.5 J/K mol which is the expected value for a spin ${1}{2}$ system. From the CEF analysis of the magnetization data the excited crystal field split energy levels were estimated to be at 120 K and 230 K respectively, which quantitatively explain the observed Schottky anomaly in the heat capacity. A magnetic phase diagram has been constructed based on the field dependence of magnetic susceptibility and the heat capacity data.
The magnetocrystalline anisotropy exhibited in PrPd$_2$Ge$_2$ single crystal has been investigated by measuring the magnetization, magnetic susceptibility, electrical resistivity and heat capacity. PrPd$_2$Ge$_2$ crystallizes in the well known ThCr$_2$Si$_2$--type tetragonal structure. The antiferromagnetic ordering is confirmed as 5.1~K with the [001]-axis as the easy axis of magnetization. A superzone gap formation is observed from the electrical resistivity measurement when the current is passed along the [001] direction. The crystal electric field (CEF) analysis on the magnetic susceptibility, magnetization and the heat capacity measurements confirms a doublet ground state with a relatively low over all CEF level splitting. The CEF level spacings and the Zeeman splitting at high fields become comparable and lead to metamagnetic transition at 34~T due to the CEF level crossing.
We report the anisotropic magnetic properties of the ternary compound ErAl$_2$Ge$_2$. Single crystals of this compound were grown by high temperature solution growth technique,using Al:Ge eutectic composition as flux. From the powder x-ray diffraction we confirmed that ErAl$_2$Ge$_2$ crystallizes in the trigonal CaAl$_2$Si$_2$-type crystal structure. The anisotropic magnetic properties of a single crystal were investigated by measuring the magnetic susceptibility, magnetization, heat capacity and electrical resistivity. A bulk magnetic ordering occurs around 4 K inferred from the magnetic susceptibility and the heat capacity. The magnetization measured along the $ab$-plane increases more rapidly than along the $c$-axis suggesting the basal $ab$-plane as the easy plane of magnetization. The magnetic susceptibility, magnetization and the $4f$-derived part of the heat capacity in the paramagnetic regime analysed based on the point charge model of the crystalline electric field (CEF) indicate a relatively low CEF energy level splitting.
High temperature crystal structure of UPt$_2$Si$_2$ determined using single-crystal neutron diffraction at 400 K is reported. It is found that the crystal structure remains of the primitive tetragonal CaBe$_2$Ge$_2$ type with the space group P4/$n m m. Anisotropic displacement factors of the Pt atoms at the 2a (3/4 1/4 0) and Si atoms at the 2c (1/4 1/4 z) Wyckoff sites are found to be anomalously large.
We report Raman-scattering results of YbRu$_2$Ge$_2$ single crystals to explore the phononic and crystal-field (CF) excitations. This heavy-fermion metal is suggested to enter a ferroquadrupolar (FQ) phase below T$_0$=10 K. The tetragonal CF potential splits the Yb$^{3+}$ $^2F_{7/2}$ ground multiplet into two $Gamma_6$ and two $Gamma_7$ Kramers doublets. We establish the following CF level scheme of the ground multiplet: a $Gamma_6$ ground state, with the two $Gamma_7$ states at 2 cm$^{-1}$, 95 cm$^{-1}$ and the other $Gamma_6$ state at 239 cm$^{-1}$. The $sim$2 cm$^{-1}$ separation between the CF ground and first excited states is in agreement with the previously proposed quasi-quartet CF ground state. The intensity of the lowest-energy CF transition remarkably increases on cooling, indicating a coupling of this CF excitation to the quadrupolar fluctuations above T$_0$. From symmetry analysis, we suggest that the FQ order has B$_{1g}$ symmetry. Moreover, temperature-dependent study of four Raman-active phonon modes shows that the intensities of the A$_{1g}$ and one E$_{g}$ modes increase significantly on cooling, which is explained by a near-resonant coupling between these two phonon modes and CF transitions.