Static and dynamic behavior study of silicon carbide Schottky and junction barrier Schottky diodes at high temperatures
published by Aِl-Baath University
in 2018
in Electrical Power Engineering
and research's language is
العربية
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Abstract in English
In this paper, we studied the static and dynamic behavior of the
silicon carbide Schottky diodes and junction barrier Schottky diodes. The
objective of this study is to understand the performance and
characteristics of these devices in multiple working situations and in high
temperature conditions, as well as to clarify the distinction between these
two types of diodes.
References used
J.L. Hudgins; G.S. Simin; E. Santi, M.A. Khan, "An assessment of wide bandgap semiconductors for power devices," Power Electronics, IEEE Transactions on, vol.18, no.3, pp. 907-914, May 2003
C.E. Weitzel et al, "Silicon carbide high-power devices," Electron Devices, IEEE Transactions on , vol.43, no.10, pp.1732-1741, Oct 1996
L. Lorenz, "Power Semiconductor Devices-Development Trends and System Interactions", Power Conversion Conference - Nagoya, 2007, pp.348-354