The effect of the self action potential energy of charge carrier located in isotropic layer on the energy gape in lead iodide layer


Abstract in English

In this work, the effect of electric permittivity and thin layer thickness on the energy gape has been studied in a system consisting of three thin layers by means of finding the self action potential of charge carrier located in the central layer of this system. Then, the self action potential energy has been found by solving Schrödinger equation at the extracted potential. This study shows that energy gape of PbI2 decreases with layer thickness while it increases/decreases according to comparison between dielectric permittivity values of central layer and counterparts of two neighborhood layers on both sides.

References used

Coulomb potential of electron and holes (exciton) in thin films and the effect of anisotropic coefficient of dielectric constant. M, Fahoud. Tishreen University Journal for Research Scientific Studies Vol. 33.No. 2 .p.4, 2011
From MSc Thesis of Lars Gimmestad Johansen, Energy bands in semiconductors
JOURNAL OF APPLIED PHYSICS VOLUME 107, 024305, 2010

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