Abstract in English

We present a PC controlled apparatus, we have built up to measure automatically forward electrical characteristics and capacity versus voltage characteristics, of schottky diodes. Methods used to extract electrical parameters of these diodes (leakage current, Schottky barrier height and substrat doping concentration) are described. These methods were applied to a commercial Schottky diode, used as Alpha particles detector (surface barrier detector), and the obtained results were compatible with the expected ones.

References used

Okumura, T. and K. N Tu, Appl, J. “Analysis of parallel Schottky contacts by differential internal photoemission spectroscopy”, Phys. 54 (2). 1983
Schroder,D.K.1990. "Semiconductor material and device characterization"
Andre Vapaille et Rene Castagne, 1987. Dispositifs et circuits integres semiconducteurs

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