CdTe Thin films were deposited on silicon substrates by thermal evaporation method. The geometric thickness was calculated using interferometric method based on reflectance curve recorded with the spectrophotometer. The Reflection of High-Energy Electron Diffraction (RHEED) patterns and XRD analysis reveals that the structure of the films are polycrystalline with preferential orientation (111). The structure constant (a), crystallite size (D), dislocation density (δ) and strain (ε) were calculated, and it is observed that the crystallite size increases but micro-strain and dislocation density decreases with increases in thin film thickness. The composition of the samples was determined by Energy Dispersive X-ray Analysis (EDX) and it is found that the wt.% of Cd increases and the wt.% of Te decreases with the increases of film thickness due to the re-evaporation of Te.