Polarization Effect in Metal-Insulator-Semiconductor structures


Abstract in English

This research is a theoretical study for the scattering mechanism of the charge carrier in the transport tunnels of system consisting of metal-insulator- semiconductor (MIS)- When the insulator is polarized where the conductivity of surface for semiconductor polarization behavior due to charge transfer during interfaces. The aim of this research is to investigate the effect of self-action and polarization potentials on the ground state of electron- polaron in semiconductor layer by means of is olating the Schrodinger equation and discussion of some special cases such as the potential is triangular form (case of contact metal – semiconductor).

References used

G. Juska,K. Arlauskas,R. Osterbacka and H.Stubb, Synth. Met., 2000, 109, 181
N. Karl, Synth. Met.,2002, 133–134, 649
Y. S. Lee, J. H. Park and J. S. Choi, Opt. Mater. (Amsterdam), 2002, 21, 433

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