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Register a new userSpin transport and quasi 2D architectures for donor-based quantum computing
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Through the introduction of a new electron spin transport mechanism, a 2D donor electron spin quantum computer architecture is proposed. This design addresses major technical issues in the original Kane design, including spatial oscillations in the exchange coupling strength and cross-talk in gate control. It is also expected that the introduction of a degree of non-locality in qubit gates will significantly improve the scaling fault-tolerant threshold over the nearest-neighbour linear array.
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We propose a scheme for quantum information processing based on donor electron spins in semiconductors, with an architecture complementary to the original Kane proposal. We show that a naive implementation of electron spin qubits provides only modest improvement over the Kane scheme, however through the introduction of global gate control we are able to take full advantage of the fast electron evolution timescales. We estimate that the latent clock speed is 100-1000 times that of the nuclear spin quantum computer with the ratio $T_{2}/T_{ops}$ approaching the $10^{6}$ level.
Particle transport and localization phenomena in condensed-matter systems can be modeled using a tight-binding lattice Hamiltonian. The ideal experimental emulation of such a model utilizes simultaneous, high-fidelity control and readout of each lattice site in a highly coherent quantum system. Here, we experimentally study quantum transport in one-dimensional and two-dimensional tight-binding lattices, emulated by a fully controllable $3 times 3$ array of superconducting qubits. We probe the propagation of entanglement throughout the lattice and extract the degree of localization in the Anderson and Wannier-Stark regimes in the presence of site-tunable disorder strengths and gradients. Our results are in quantitative agreement with numerical simulations and match theoretical predictions based on the tight-binding model. The demonstrated level of experimental control and accuracy in extracting the system observables of interest will enable the exploration of larger, interacting lattices where numerical simulations become intractable.
Dopant atoms are ubiquitous in semiconductor technologies, providing the tailored electronic properties that underpin the modern digital information era. Harnessing the quantum nature of these atomic-scale objects represents a new and exciting technological revolution. In this article we describe the use of ion-implanted donor spins in silicon for quantum technologies. We review how to fabricate and operate single-atom spin qubits in silicon, obtaining some of the most coherent solid-state qubits, and we discuss pathways to scale up these qubits to build large quantum processors. Heavier group-V donors with large nuclear spins display electric quadrupole couplings that enable nuclear electric resonance, quantum chaos and strain sensing. Donor ensembles can be coupled to microwave cavities to develop hybrid quantum Turing machines. Counted, deterministic implantation of single donors, combined with novel methods for precision placement, will allow the integration of individual donors spins with industry-standard silicon fabrication processes, making implanted donors a prime physical platform for the second quantum revolution.
The advent of reliable, nanoscale memristive components is promising for next generation compute-in-memory paradigms, however, the intrinsic variability in these devices has prevented widespread adoption. Here we show coherent electron wave functions play a pivotal role in the nanoscale transport properties of these emerging, non-volatile memories. By characterizing both filamentary and non-filamentary memristive devices as disordered Anderson systems, the switching characteristics and intrinsic variability arise directly from the universality of electron transport in disordered media. Our framework suggests localization phenomena in nanoscale, solid-state memristive systems are directly linked to circuit level performance. We discuss how quantum conductance fluctuations in the active layer set a lower bound on device variability. This finding implies there is a fundamental quantum limit on the reliability of memristive devices, and electron coherence will play a decisive role in surpassing or maintaining Moores Law with these systems.
Quantum simulators are attractive as a means to study many-body quantum systems that are not amenable to classical numerical treatment. A versatile framework for quantum simulation is offered by superconducting circuits. In this perspective, we discuss how superconducting circuits allow the engineering of a wide variety of interactions, which in turn allows the simulation of a wide variety of model Hamiltonians. In particular we focus on strong photon-photon interactions mediated by nonlinear elements. This includes on-site, nearest-neighbour and four-body interactions in lattice models, allowing the implementation of extended Bose-Hubbard models and the toric code. We discuss not only the present state in analogue quantum simulation, but also future perspectives of superconducting quantum simulation that open up when concatenating quantum gates in emerging quantum computing platforms.
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