A series of Silicon crystal undulator samples were produced based on the approach presented in PRL 90 (2003) 034801, with the periods of undulation from 0.1 mm to 1 mm, and the number of periods on the order of 10. The samples were characterized by X-rays, revealing the sine-like shape of the crystal lattice in the bulk. Next step in the characterization has been the channeling tests done with 70 GeV protons, where good channeling properties of the undulated Silicon lattice have been observed. The photon radiation tests of crystal undulators with high energy positrons are in progress on several locations: IHEP Protvino, LNF Frascati, and CERN SPS. The progress in the experimental activities and the predictions from detailed simulations are reported.
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