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Register a new userFull-Potential LMTO: Total Energy and Force Calculations
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The essential features of a full potential electronic structure method using Linear Muffin-Tin Orbitals (LMTOs) are presented. The electron density and potential in the this method are represented with no inherent geometrical approximation. This method allows the calculation of total energies and forces with arbitrary accuracy while sacrificing much of the efficiency and physical content of approximate methods such as the LMTO-ASA method.
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We present a new all-electron, augmented-wave implementation of the GW approximation using eigenfunctions generated by a recent variant of the full-potential LMTO method. The dynamically screened Coulomb interaction W is expanded in a mixed basis set which consists of two contributions, local atom-centered functions confined to muffin-tin spheres, and plane waves with the overlap to the local functions projected out. The former can include any of the core states; thus the core and valence states can be treated on an equal footing. Systematic studies of semiconductors and insulators show that the GW fundamental bandgaps consistently fall low in comparison to experiment, and also the quasiparticle levels differ significantly from other, approximate methods, in particular those that approximate the core with a pseudopotential.
We scrutinize the accuracy of the pseudopotential approximation in density-functional theory (DFT) calculations of surfaces by systematically comparing to results obtained within a full-potential setup. As model system we choose the CO oxidation at a RuO2(110) surface and focus in particular on the adsorbate binding energies and reaction barriers as target quantities for the comparison. Rather surprisingly, the major reason for discrepancy does not result from the neglected semi-core state relaxation in the frozen-core approximation, but from an inadequate description of the local part of the Ru pseudopotential, responsible for the scattering of f like waves. Tiny, seemingly irrelevant, imprecisions appearing in these properties can have a noticeable influence on the surface energetics. At least for the present example, we obtain excellent agreement between both approaches, if the pseudopotential describes these scattering properties accurately.
We performed high-pressure angle dispersive x-ray diffraction measurements on Fe5Si3 and Ni2Si up to 75 GPa. Both materials were synthesized in bulk quantities via a solid-state reaction. In the pressure range covered by the experiments, no evidence of the occurrence of phase transitions was observed. On top of that, Fe5Si3 was found to compress isotropically, whereas an anisotropic compression was observed in Ni2Si. The linear incompressibility of Ni2Si along the c-axis is similar in magnitude to the linear incompressibility of diamond. This fact is related to the higher valence-electron charge density of Ni2Si along the c-axis. The observed anisotropic compression of Ni2Si is also related to the layered structure of Ni2Si where hexagonal layers of Ni2+ cations alternate with graphite-like layers formed by (NiSi)2- entities. The experimental results are supported by ab initio total-energy calculations carried out using density functional theory and the pseudopotential method. For Fe5Si3, the calculations also predicted a phase transition at 283 GPa from the hexagonal P63/mcm phase to the cubic structure adopted by Fe and Si in the garnet Fe5Si3O12. The room-temperature equations of state for Fe5Si3 and Ni2Si are also reported and a possible correlation between the bulk modulus of iron silicides and the coordination number of their minority element is discussed. Finally, we report novel descriptions of these structures, in particular of the predicted high-pressure phase of Fe5Si3 (the cation subarray in the garnet Fe5Si3O12), which can be derived from spinel Fe2SiO4 (Fe6Si3O12).
We report variational and diffusion Quantum Monte Carlo ground-state energies of the three-dimensional electron gas using a model periodic Coulomb interaction and backflow corrections for N=54, 102, 178, and 226 electrons. We remove finite-size effects by extrapolation and we find lower energies than previously reported. Using the Hellman-Feynman operator sampling method introduced in Phys. Rev. Lett. 99, 126406 (2007), we compute accurately, within the fixed-node pproximation, the separate kinetic and interaction contributions to the total ground-state energy. The difference between the interaction energies obtained from the original Slater-determinant nodes and the backflow-displaced nodes is found to be considerably larger than the difference between the corresponding kinetic energies.
The structural and electronic properties of cubic GaN are studied within the local density approximation by the full-potential linear muffin-tin orbitals method. The Ga $3d$ electrons are treated as band states, and no shape approximation is made to the potential and charge density. The influence of $d$ electrons on the band structure, charge density, and bonding properties is analyzed. It is found that due to the energy resonance of the Ga 3$d$ states with nitrogen 2$s$ states, the cation $d$ bands are not inert, and features unusual for a III-V compound are found in the lower part of the valence band and in the valence charge density and density of states. To clarify the influence of the Ga $d$ states on the cohesive properties, additional full and frozen--overlapped-core calculations were performed for GaN, cubic ZnS, GaAs, and Si. The results show, in addition to the known importance of non-linear core-valence exchange-correlation corrections, that an explicit description of closed-shell repulsion effects is necessary to obtain accurate results for GaN and similar systems. In summary, GaN appears to be somewhat exceptional among the III-V compounds and reminiscent of II-VI materials, in that its band structure and cohesive properties are sensitive to a proper treatment of the cation $d$ bands, as a result of the presence of the latter in the valence band range.
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