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Register a new userTunable Charge Density Wave Transport in a Current-Effect Transistor
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The collective charge density wave (CDW) conduction is modulated by a transverse single-particle current in a transistor-like device. Nonequilibrium conditions in this geometry lead to an exponential reduction of the depinning threshold, allowing the CDWs to slide for much lower bias fields. The results are in excellent agreement with a recently proposed dynamical model in which wrinkles in the CDW wavefronts are ironed by the transverse current. The experiment might have important implications for other driven periodic media, such as moving vortex lattices or striped phases in high-Tc superconductors.
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We report transport measurements under very high current densities $j$, up to $sim10^8$~A/cm$^2$, of quasi-one-dimensional charge-density wave (CDW) conductors NbSe$_3$ and TaS$_3$. Joule heating has been minimized by using a point-contact configuration or by measuring samples with extremely small cross-sections. Above $j_c approx 10^7$~A/cm$^2$ we find evidence for suppression of the Peierls gap and development of the metallic state. The critical CDW velocity corresponding with $j_0$ is comparable with the sound velocity, and with $Delta/ hbar k_F$ ($k_F$ is the Fermi wave vector), which corresponds to the depairing current. Possible scenarios of the Peierls state destruction are discussed.
The low-temperature Hall resistivity rho_{xy} of La_{2/3}A_{1/3}MnO_3 single crystals (where A stands for Ca, Pb and Ca, or Sr) can be separated into Ordinary and Anomalous contributions, giving rise to Ordinary and Anomalous Hall effects, respectively. However, no such decomposition is possible near the Curie temperature which, in these systems, is close to metal-to-insulator transition. Rather, for all of these compounds and to a good approximation, the rho_{xy} data at various temperatures and magnetic fields collapse (up to an overall scale), on to a single function of the reduced magnetization m=M/M_{sat}, the extremum of this function lying at m~0.4. A new mechanism for the Anomalous Hall Effect in the inelastic hopping regime, which reproduces these scaling curves, is identified. This mechanism, which is an extension of Holsteins model for the Ordinary Hall effect in the hopping regime, arises from the combined effects of the double-exchange-induced quantal phase in triads of Mn ions and spin-orbit interactions. We identify processes that lead to the Anomalous Hall Effect for localized carriers and, along the way, analyze issues of quantum interference in the presence of phonon-assisted hopping. Our results suggest that, near the ferromagnet-to-paramagnet transition, it is appropriate to describe transport in manganites in terms of carrier hopping between states that are localized due to combined effect of magnetic and non-magnetic disorder. We attribute the qualitative variations in resistivity characteristics across manganite compounds to the differing strengths of their carrier self-trapping, and conclude that both disorder-induced localization and self-trapping effects are important for transport.
Using angle-resolved photoemission spectroscopy (ARPES) and low-energy electron diffraction (LEED), together with density-functional theory (DFT) calculation, we report the formation of charge density wave (CDW) and its interplay with the Kondo effect and topological states in CeSbTe. The observed Fermi surface (FS) exhibits parallel segments that can be well connected by the observed CDW ordering vector, indicating that the CDW order is driven by the electron-phonon coupling (EPC) as a result of the nested FS. The CDW gap is large (~0.3 eV) and momentum-dependent, which naturally explains the robust CDW order up to high temperatures. The gap opening leads to a reduced density of states (DOS) near the Fermi level (EF), which correspondingly suppresses the many-body Kondo effect, leading to very localized 4f electrons at 20 K and above. The topological Dirac cone at the X point is found to remain gapless inside the CDW phase. Our results provide evidence for the competition between CDW and the Kondo effect in a Kondo lattice system. The robust CDW order in CeSbTe and related compounds provide an opportunity to search for the long-sought-after axionic insulator.
We study phenomena driven by electron-electron interactions in the minimally twisted bilayer graphene (mTBLG) with a perpendicular electric field. The low-energy degrees of freedom in mTBLG are governed by a network of one-dimensional domain-wall states, described by two channels of one-dimensional linearly dispersing spin-1/2 fermions. We show that the interaction can realize a spin-gapped inter-channel charge density wave (CDW) state at low temperatures, forming a Coulomb drag between the channels and leaving only one charge conducting mode. For sufficiently high temperatures, power-law-in-temperature resistivity emerges from the charge umklapp scatterings within a domain wall. Remarkably, the presence of the CDW states can strengthen the charge umklapp scattering and induce a resistivity minimum at an intermediate temperature corresponding to the CDW correlation energy. We further discuss the conditions that resistivity of the network is dominated by the domain walls. In particular, the power-law-in-temperature resistivity results can apply to other systems that manifest topological domain-wall structures.
We study theoretically the current-voltage characteristics (IVCs) of the Josephson field effect transistor - a ballistic SNINS junction with superconducting (S) electrodes confining a planar normal metal region (N), which is controlled by the gate induced potential barrier (I). The calculations were performed using the computation technique developed earlier for long single-channel junctions in the coherent multiple Andreev reflections (MAR) regime. We find significant difference of the subgap current structure in these junctions compared to the subharmonic gap structure in tunnel junctions and atomic-size point contacts. For long junctions, whose length significantly exceeds the coherence length, the IVC exhibits current peaks at multiples (harmonics) of the difference $delta_m$ between the static Andreev levels, $eV_n = ndelta_m$. Moreover, the averaged IVC follows the power rather than exponential behavior, and has a universal scaling with the junction transparency. This result is qualitatively understood using an analytical approach based on the concept of resonant MAR trajectories. In shorter junctions whose length is comparable to the coherence length, the IVC has an exponential form common for point contacts, however the current structures appear at the subharmonics of the Andreev interlevel distance, $eV_n = delta_m/n$ rather than the gap subharmonics $2Delta/n$.
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