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Register a new userQuantum Dynamics of Pseudospin Solitons in Double-Layer Quantum Hall Systems
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Pseudospin solitons in double-layer quantum Hall systems can be introduced by a magnetic field component coplanar with the electrons and can be pinned by applying voltages to external gates. We estimate the temperature below which depinning occurs predominantly via tunneling and calculate low-temperature depinning rates for realistic geometries. We discuss the local changes in charge and current densities and in spectral functions that can be used to detect solitons and observe their temporal evolution.
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We propose two experimental setups that allow for the implementation and the detection of fractional solitons of the Goldstone-Wilczek type. The first setup is based on two magnetic barriers at the edge of a quantum spin Hall system for generating the fractional soliton. If then a quantum point contact is created with the other edge, the linear conductance shows evidence of the fractional soliton. The second setup consists of a single magnetic barrier covering both edges and implementing a long quantum point contact. In this case, the fractional soliton can unambiguously be detected as a dip in the conductance without the need to control the magnetization of the barrier.
We revisit the physics of electron gas bilayers in the quantum Hall regime [Nature, 432 (2004) 691; Science, 305 (2004) 950], where transport and tunneling measurements provided evidence of a superfluid phase being present in the system. Previously, this behavior was explained by the possible formation of a BEC of excitons in the half-filled electron bilayers, where empty states play the role of holes. We discuss the fundamental difficulties with this scenario, and propose an alternative approach based on a treatment of the system as a pseudospin magnet. We show that the experimentally observed tunneling peak can be linked to the XY ferromagnet (FM) to Ising antiferromagnet (AFM) phase transition of the S=1/2 XXZ pseudospin model, driven by the change in total electron density. This transition is accompanied by a qualitative change in the nature of the low energy spin wave dispersion from a gapless linear mode in the XY-FM phase to a gapped, quadratic mode in the Ising-AFM phase.
When two Landau levels are brought to a close coincidence between them and with the chemical potential in the Integer Quantum Hall regime, the two Landau levels can just cross or collapse while the external or pseudospin field that induces the alignment changes. In this work, all possible crossings are analyzed theoretically for the particular case of semiconductor trilayer systems, using a variational Hartree-Fock approximation. The model includes tunneling between neighboring layers, bias, intra-layer and inter-layer Coulomb interaction among the electrons. We have found that the general pseudospin anisotropy classification scheme used in bilayers applies also to the trilayer situation, with the simple crossing corresponding to an easy-axis ferromagnetic anisotropy analogy, and the collapse case corresponding to an easy-plane ferromagnetic analogy. An isotropic case is also possible, with the levels just crossing or collapsing depending on the filling factor and the quantum numbers of the two nearby levels. While our results are valid for any integer filling factor $ u$ (=1,2,3,...), we have analyzed in detail the crossings at $ u=3$ and $4$, and we have given clear predictions that will help in their experimental search. In particular, the present calculations suggest that by increasing the bias, the trilayer system at these two filling factors can be driven from an easy-plane anisotropy regime to an easy-axis regime, and then can be driven back to the easy-plane regime. This kind of reentrant behavior is an unique feature of the trilayers, compared with the bilayers.
Recent advances in quantum engineering have given us the ability to design hybrid systems with novel properties normally not present in the regime they operate in. The coupling of spin ensembles and magnons to microwave resonators has for instance lead to a much richer understanding of collective effects in these systems and their potential quantum applications. We can also hybridize electron and nuclear spin ensembles together in the solid-state regime to investigate collective effects normally only observed in the atomic, molecular and optical world. Here we explore in the solid state regime the dynamics of a double domain nuclear spin ensemble coupled to the Nambu-Goldstone boson in GaAs semiconductors and show it exhibits both collective and individual relaxation (thermalization) on very different time scales. Further the collective relaxation of the nuclear spin ensemble is what one would expect from superradiant decay. This opens up the possibility for the exploration of novel collective behaviour in solid state systems where the natural energies associated with those spins are much less than the thermal energy.
In higher Landau levels (N>0) and around filling factors nu =4N+1, a two-dimensional electron gas in a double-quantum-well system supports a stripe groundstate in which the electron density in each well is spatially modulated. When a parallel magnetic field is added in the plane of the wells, tunneling between the wells acts as a spatially rotating effective Zeeman field coupled to the ``pseudospins describing the well index of the electron states. For small parallel fields, these pseudospins follow this rotation, but at larger fields they do not, and a commensurate-incommensurate transition results. Working in the Hartree-Fock approximation, we show that the combination of stripes and commensuration in this system leads to a very rich phase diagram. The parallel magnetic field is responsible for oscillations in the tunneling matrix element that induce a complex sequence of transitions between commensurate and incommensurate liquid or stripe states. The homogeneous and stripe states we find can be distinguished by their collective excitations and tunneling I-V, which we compute within the time-dependent Hartree-Fock approximation.
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