No Arabic abstract
In a recent letter M. Lilly et al [PRL 82, 394 (1999)] have shown that a highly anisotropic state can arise in certain two dimensional electron systems. In the large square samples studied, resistances measured in the two perpendicular directions are found to have a ratio that may be 60 or larger at low temperature and at certain magnetic fields. In Hall bar measurements, the anisotropy ratio is found to be much smaller (roughly 5). In this comment we resolve this discrepancy by noting that the anisotropy of the underlying sheet resistivities is correctly represented by Hall bar resistance measurements but shows up exponentially enhanced in resistance measurements on square samples due to simple geometric effects. We note, however, that the origin of this underlying resistivity anisotropy remains unknown, and is not addressed here.
We calculate the density of states of a two dimensional electron gas located at the interface of a GaAlAs/GaAs heterojunction. The disorder potential which is generally created by a single doping layer behind a spacer, is here enhanced by the presence of a second delta doped layer of scatterers which can be repulsive or attractive impurities. We have calculated the density of states by means of the Klauders approximation, in the presence of a magnetic field of arbitrary strength. At low field either band tails or impurity bands are observed for attractive potentials, depending on the impurity concentration. At higher field, impurity bands are observed for both repulsive and attractive potentials. We discuss the effect of such an asymmetrical density of states on the transport properties in the quantum Hall effect regime.
Developments in the physics of 2D electron systems during the last decade have revealed a new class of nonequilibrium phenomena in the presence of a moderately strong magnetic field. The hallmark of these phenomena is magnetoresistance oscillations generated by the external forces that drive the electron system out of equilibrium. The rich set of dramatic phenomena of this kind, discovered in high mobility semiconductor nanostructures, includes, in particular, microwave radiation-induced resistance oscillations and zero-resistance states, as well as Hall field-induced resistance oscillations and associated zero-differential resistance states. We review the experimental manifestations of these phenomena and the unified theoretical framework for describing them in terms of a quantum kinetic equation. The survey contains also a thorough discussion of the magnetotransport properties of 2D electrons in the linear response regime, as well as an outlook on future directions, including related nonequilibrium phenomena in other 2D electron systems.
Recent experiments on Coulomb drag in the quantum Hall regime have yielded a number of surprises. The most striking observations are that the Coulomb drag can become negative in high Landau levels and that its temperature dependence is non-monotonous. We develop a systematic diagrammatic theory of Coulomb drag in strong magnetic fields explaining these puzzling experiments. The theory is applicable both in the diffusive and the ballistic regimes; we focus on the experimentally relevant ballistic regime (interlayer distance $a$ smaller than the cyclotron radius $R_c$). It is shown that the drag at strong magnetic fields is an interplay of two contributions arising from different sources of particle-hole asymmetry, namely the curvature of the zero-field electron dispersion and the particle-hole asymmetry associated with Landau quantization. The former contribution is positive and governs the high-temperature increase in the drag resistivity. On the other hand, the latter one, which is dominant at low $T$, has an oscillatory sign (depending on the difference in filling factors of the two layers) and gives rise to a sharp peak in the temperature dependence at $T$ of the order of the Landau level width.
We investigate the coupling between Rydberg states of electrons trapped on a liquid Helium surface and Landau levels induced by a perpendicular magnetic field. We show that this realises a prototype quantum system equivalent to an atom in a cavity, where their coupling strength can be tuned by a parallel magnetic field. We determine experimentally the renormalisation of the atomic transition energies induced by the coupling to the cavity, which can be seen as an analogue of the Lamb shift. When the coupling is sufficiently strong the transition between the ground and first excited Rydberg states splits into two resonances corresponding to dressed states with vacuum and one photon in the cavity. Our results are in quantitative agreement with the energy shifts predicted by the effective atom in a cavity model where all parameters are known with high accuracy.
The double quantum well systems consisting of two HgTe layers separated by a tunnel-transparent barrier are expected to manifest a variety of phase states including two-dimensional gapless semimetal and two-dimensional topological insulator. The presence of several subbands in such systems leads to a rich filling factor diagram in the quantum Hall regime. We have performed magnetotransport measurements of the HgTe-based double quantum wells in both gapless and gapped state and observed numerous crossings between the Landau levels belonging to different subbands. We analyze the Landau level crossing patterns and compare them to the results of theoretical calculations.