No Arabic abstract
In a mesoscopic metal in proximity with a superconductor, the electronic conductance is enhanced in a very energy-sensitive way. In this paper, we discuss the spectral conductance of a proximity superconductor from both the theoretical and experimental point of view. The dependence of the spectral conductance on the phase-breaking length, gap of the superconductor and interface transparency is theoretically investigated. We present experimental data on the re-entrance of the normal-state conductance at very low temperature and bias voltage. A complete description of the experimental data needs taking into account heating of the reservoirs by the bias current. In addition, we show that the energy sensitivity of the proximity effect enables one to access the energy distribution of the conduction electrons inside a mesoscopic sample.
We present an experimental study of the diffusive transport in a normal metal near a superconducting interface, showing the re-entrance of the metallic conductance at very low temperature. This new mesoscopic regime comes in when the thermal coherence length of the electron pairs exceeds the sample size. This re-entrance is suppressed by a bias voltage given by the Thouless energy and can be strongly enhanced by an Aharonov Bohm flux. Experimental results are well described by the linearized quasiclassical theory.
We study heat transport in hybrid normal metal - superconductor - normal metal (NSN) structures. We find the thermal conductance of a short superconducting wire to be strongly enhanced beyond the BCS value due to inverse proximity effect. The measurements agree with a model based on the quasiclassical theory of superconductivity in the diffusive limit. We determine a crossover temperature below which quasiparticle heat conduction dominates over the electron-phonon relaxation.
The superconducting proximity effect has played an important role in recent work searching for Majorana modes in thin semiconductor devices. Using transport measurements to quantify the changes in the semiconductor caused by the proximity effect provides a measure of dynamical processes such as screening and scattering. However, in a two terminal measurement the resistance due to the interface conductance is in series with resistance of transport in the semiconductor. Both of these change, and it is impossible to separate them without more information. We have devised a new three terminal device that provides two resistance measurements that are sufficient to extract both the junction conductance and the two dimensional sheet resistance under the superconducting contact. We have compared junctions between Nb and InAs and Nb and 30% InGaAs all grown before being removed from the ultra high vacuum molecular beam epitaxy growth system. The most transparent junctions are to InAs, where the transmission coefficient per Landauer mode is greater than 0.6. Contacts made with ex-situ deposition are substantially more opaque. We find that for the most transparent junctions, the largest fractional change as the temperature is lowered is to the resistance of the semiconductor.
We have tuned in situ the proximity effect in a single graphene layer coupled to two Pt/Ta superconducting electrodes. An annealing current through the device changed the transmission coefficient of the electrode/graphene interface, increasing the probability of multiple Andreev reflections. Repeated annealing steps improved the contact sufficiently for a Josephson current to be induced in graphene.
We calculate the local density of states (LDOS) of a superconductor-normal metal sandwich at arbitrary impurity concentration. The presence of the superconductor induces a gap in the normal metal spectrum that is proportional to the inverse of the elastic mean free path $l$ for rather clean systems. For a mean free path much shorter than the thickness of the normal metal, we find a gap size proportional to $l$ that approaches the behavior predicted by the Usadel equation (diffusive limit).